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參數(shù)資料
| 型號(hào)： | NTE72 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor High Current Amp, Fast Switch |
| 中文描述： | 硅NPN晶體管高電流放大器，快速開關(guān) |
| 文件頁數(shù)： | 1/2頁 |
| 文件大小： | 25K |
| 代理商： | NTE72 |
NTE72
Silicon NPN Transistor
High Current Amp, Fast Switch
Features:
High Power: 100W @ T
C
= +50
°
C, V
CE
= 40V
High Voltage: V
CEO
= 80V Min
High Current Saturation Voltage: V
CE(sat)
= 1.5V @ 10A
High Frequency: f
T
= 30MHz Min
Isolated Collector Package, No Isolating hardware Required
Absolute Maximum Ratings:
(Note 1)
Collector–Emitter Voltage, V
CES
Collector–Emitter Voltage (Note 2), V
CEO
Emitter–Base Voltage, V
EBO
Collector Current, I
C
Total Power Dissipation (T
C
= +50
°
C, V
CE
= 40V), P
T
Operating Junction Temperature Range, T
opr
Storage Temperature Range, T
stg
Lead Temperature (During Soldering, 60sec max), T
L
Note 1. These ratings are limiting values above which the serviceability of the NTE72 transistor may
be impaired.
Note 2. This rating refers to a high current point where collector–emitter voltage is lowest.
100V
80V
6V
10A
100W
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. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65
°
to +200
°
C
–65
°
to +200
°
C
+300
°
C
Electrical Characteistics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Emitter Sustaining Voltage
V
CEO(sus)
I
C
= 200mA, I
B
= 0, Notes 2 & 3
V
(BR)CES)
I
C
= 1mA, V
BE
= 0
V
(BR)EBO
I
E
= 1mA, I
C
= 0
h
FE
I
C
= 100mA, V
CE
= 5V
I
C
= 5A, V
CE
= 5V
I
C
= 5A, V
CE
= 5V, T
C
= –55
°
C
I
C
= 10A, V
CE
= 5V
80
–
–
V
Collector–Emitter Breakdown Voltage
100
–
–
V
Emitter–Base Breakdown Voltage
6
–
–
V
DC Pulse Current Gain (Note 3)
50
95
–
70
108
200
35
51
–
45
91
–
Note 2. This rating refers to a high current point where collector–emitter voltage is lowest.
Note 3. Pulse Conditions: Pulse Width = 300
μ
s, Duty Cycle = 1%.
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