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參數(shù)資料
| 型號(hào)： | NTE71 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor High Current Amp, Fast Switch |
| 中文描述： | 硅NPN晶體管高電流放大器，快速開關(guān) |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | NTE71 |
NTE71
Silicon NPN Transistor
High Current Amp, Fast Switch
Description:
The NTE71 is silicon NPN transistor in a TO63 stud mount package utilizing C2R processing that
provides surface stabilization for high voltage operation and enhances long term reliability.
Absolute Maximum Ratings:
Collector–Base Voltage, V
CBO
Collector–Emitter Voltage, V
CEO
Emitter–Base VOltage, V
EBO
Continuous Collector Current, I
C
Continuous Base Current, I
B
Total Power Dissipation (T
C
= +25
°
C), P
D
Storage Temperature Range, T
stg
150V
150V
10V
20A
4.5A
200W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65
°
to +200
°
C
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise spcified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Sustaining Voltage
V
(BR)CEO(sus)
I
EBO
I
CEX
I
C
= 100mA
V
EB
= 10V
V
CE
= 150V, V
BE
= –1.5V
V
CE
= 150V, V
BE
= –1.5V,
T
C
= +150
°
C
150
–
–
V
μ
A
mA
Emitte Cutoff Current
–
–
250
Collector Cutoff Current
–
–
2
–
–
20
mA
ON Characteristics
(Note 1)
DC Current Gain
h
FE
V
CE
= 3V, I
C
= 10A
I
C
= 10A, I
B
= 1.5A
I
C
= 10A, I
B
= 1.5A
10
–
50
Collector Saturation Voltage
V
CE(sat)
V
BE
–
–
1.5
V
Base–Emitter Voltage
–
–
2.5
V
Note 1. Pulse test: Pulse Width = 300
μ
s, Duy Cycle
≤
2%.
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