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參數(shù)資料
| 型號(hào)： | NTE65 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor High Voltage, Low Noise for CATV, MATV |
| 中文描述： | 硅NPN晶體管高電壓，低的有線電視，美亞噪聲 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 22K |
| 代理商： | NTE65 |
NTE65
Silicon NPN Transistor
High Voltage, Low Noise for CATV, MATV
Description:
The NTE65 is silicon NPN transistor designed primarily for use in high–gain, low–noise, small–signal
amplifier and also used in applications requiring fast switching times.
Features:
High Current–Gain Bandwidth Product
Low Noise Figure
High Power Gain
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Total Device Dissipation (T
A
= +60
°
C), P
D
Derate Above 60
°
C
Storage Temperature Range, T
stg
Thremal Resistance, Junction–to–Ambient, R
thJA
15V
20V
3V
30mA
180mW
2.0mW/
°
C
–65
°
to +150
°
C
500
°
C/W
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Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
C
= 1mA, I
B
= 0
I
C
= 0.1mA, I
E
= 0
I
E
= 0.1mA, I
C
= 0
V
CB
= 10V, I
E
= 0
15
–
–
V
Collector–Base Breakdown Voltage
20
–
–
V
Emitter–Base Breakdown Voltage
3
–
–
V
Collector Cutoff Current
–
–
50
nA
ON Characteristics
DC Current Gain
h
FE
V
CE
= 10V, I
C
= 14mA
25
–
250
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