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參數(shù)資料
| 型號(hào)： | NTE592 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon Diode, General Purpose, High Voltage |
| 中文描述： | 硅二極管，通用，高電壓 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 18K |
| 代理商： | NTE592 |
NTE592
Silicon Diode, General Purpose, High Voltage
Description:
The NTE592 is a silicon epitaxial high–speed diode in an SOT–23 type surface mount package. This
device is intended for switching and general purposes applications.
Absolute Maximum Ratings:
Continuous Reverse Voltage, V
R
Repetitive Peak Reverse Voltage, V
RRM
Non–Repetitive Peak Forward Current (t = 1s), I
FSM
Average Rectified Forward Current (Average over any 20ms period, Note 1), I
F(Av)
DC Forward Current (T
A
≤
+25
°
C, Note 2), I
F
Repetitive Peak Forward Current, I
FRM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
≤
+25
°
C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient (Note 2), R
thJA
Thermal Resistance, Tab–to–Soldering Points, R
thTS
Thermal Resistance, Soldering Points–to–Ambient, R
thSA
Note 1. Measured under pulse conditions: Pulse Time = t
p
≤
0.3ms.
Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).
200V
250V
500mA
200mA
200mA
625mA
200mW
+150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–65
°
to +150
°
C
430K/W
280K/W
. . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
90K/W
Electrical Characteristics:
(T
J
= +25
°
C unless otherwise specified)
Parameter
Forward Voltage
Symbol
V
F
Test Conditions
I
F
= 100mA
I
F
= 200mA
I
R
= 100
μ
A, Note 1 & 3
V
R
= 200V
V
R
= 200V, T
J
= +150
°
C
I
F
= 10mA
V
R
= 0, f = 1MHz
measured at I
R
= 3mA,
R
L
= 100
Min
–
–
250
–
–
–
–
–
Typ
–
–
–
–
–
5
–
–
Max
1.00
1.25
–
100
100
–
5
50
Unit
V
V
V
nA
μ
A
pF
ns
Reverse Breakdown Voltage
Reverse Current
V
(BR)R
I
R
Differential Resistance
Diode Capacitance
Reverse Recovery Time
(When switched from
I
F
= 30mA to I
R
= 30mA
r
diff
C
d
t
rr
Note 1. Measured under pulse conditions: Pulse Time = t
p
≤
0.3ms.
Note 3. At zero life time, measured under pulse conditions to avoid excessive dissipation and voltage
limited to 275V.
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| NTE5925 | 制造商:NTE Electronics 功能描述:RECTIFIER 600V 20A DO-4 ANODE CASE 制造商:NTE Electronics 功能描述:STANDARD DIODE 20A 600V DO-4 制造商:NTE Electronics 功能描述:STANDARD DIODE, 20A, 600V, DO-4; Diode Type:Standard Recovery; Diode Configuration:Single; Repetitive Reverse Voltage Vrrm Max:600V; Forward Current If(AV):20A; Forward Voltage VF Max:1.23V; Forward Surge Current Ifsm Max:400A ;RoHS Compliant: Yes 制造商:NTE Electronics 功能描述:Diode 600V 20A 2-Pin DO-4 |
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