參數(shù)資料
型號： NTE5602
廠商： NTE Electronics, Inc.
英文描述： TRIAC, 4 Amp
中文描述： 可控硅，4安培
文件頁數(shù)： 2/2頁
文件大?。?/td> 20K
代理商： NTE5602
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
μ
A
Peak Forward or Reverse
Blocking Current
I
DRM
,
I
RRM
Rated V
DRM
or V
RRM
, Gate Open,
T
J
= +25
°
C
Rated V
DRM
or V
RRM
, Gate Open,
T
J
= +110
°
C
I
TM
= 6A Peak
–
–
10
–
–
2
mA
On
–
State Voltage (Either Direction)
V
TM
V
GT
–
–
2
V
Peak Gate Trigger Voltage
MT
2
(+), G (+); MT
2
(
–
), G (
–
)
MT
2
(+), G (
–
); MT
2
(
–
), G (+)
Peak Gate Trigger Voltage
MT
2
(+), G (+); MT
2
(
–
), G (
–
)
MT
2
(+), G (
–
); MT
2
(
–
), G (+)
Holding Current (Either Direction)
Main Terminal Voltage = 12V,
R
L
= 100
, T
J
=
–
40
°
C
–
1.4
2.5
V
V
GT
Main Terminal Voltage = Rated V
DRM
,
R
L
= 10k
, T
J
= +110
°
C
Main Terminal Voltage = 12V, Gate Open,
T
J
=
–
40
°
C, Initiating Current = 1A
Main Terminal Voltage = 12V, Gate Open,
T
J
= +25
°
C
I
TM
= 14A, I
GT
= 100mA
Rated V
DRM
, Gate Open, T
J
= +85
°
C
0.2
–
–
V
I
H
–
–
70
mA
–
–
30
mA
Turn
–
On Time (Either Direction)
t
on
dv/dt
–
1.5
–
μ
s
V/
μ
s
Blocking Voltage Application
Rate at Commutation
–
5
–
Gate Trigger Current
Quads I & III
I
GT
Main Terminal Voltage = 12V,
R
L
= 100
,
T
J
= +25
°
C
Main Terminal Voltage = 12V,
R
L
= 100
,
T
J
=
–
40
°
C
–
–
30
mA
–
–
60
mA
.330 (8.38)
Max
.450
(11.4)
Max
.655
(16.6)
Max
.130 (3.3)
Max
.175
(4.45)
Max
.030 (.762) Dia
.090 (2.28)
.118 (3.0)
Dia
MT
1
MT
2
G
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