參數(shù)資料
型號(hào)： NTE491
廠商： NTE Electronics, Inc.
英文描述： MOSFET N-Ch, Enhancement Mode High Speed Switch
中文描述： MOSFET的N溝道，增強(qiáng)模式高速開(kāi)關(guān)
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 22K
代理商： NTE491
NTE491
MOSFET
N–Ch, Enhancement Mode
High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V
DS
Drain–Gate Voltage (R
GS
= 1M
), V
DGR
Gate–Source Voltage, V
GS
Drain Current, I
D
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Pulsed
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
th (JA)
Maximum Lead Temperature (During Soldering, 1/16” from case, 10sec), T
L
60V
60V
±
40V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
200mA
500mA
350mW
2.8mW/
°
C
–55
°
to +150
°
C
–55
°
to +150
°
C
312.5
°
C/W
. . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+300
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Zero–Gate–Voltage Drain Current
I
DSS
V
DS
= 48V, V
GS
= 0
V
DS
= 48V, V
GS
= 0, T
J
= +125
°
C
V
GS
= 0, I
D
= 10
μ
A
V
GSF
= 15V, V
DS
= 0
–
–
1.0
μ
A
mA
–
–
1.0
Drain–Source Breakdown Voltage
V
(BR)DSS
I
GSSF
60
–
–
V
Gate–Body Leakage Current, Forward
–
–
–10
nA
ON Characteristics
(Note 1)
Gate Threshold Voltage
V
GS(Th)
r
DS(on)
I
D
= 1mA, V
DS
= V
GS
V
GS
= 10V, I
D
= 500mA
V
GS
= 4.5V, I
D
= 75mA
V
GS
= 10V, I
D
= 500mA
V
GS
= 4.5V, I
D
= 75mA
V
GS
= 4.5V, V
DS
= 10V
V
DS
= 10V, I
D
= 200mA
0.8
–
3.0
V
V
Static Drain–Source ON Resistance
–
–
5.0
–
–
6.0
Drain–Source ON–Voltage
V
DS(on)
–
–
2.5
–
–
0.45
V
ON–State Drain Current
I
d(on)
g
fs
75
–
–
mA
μ
mhos
Forward Transconductance
100
–
–
Note 1. Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2%.
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