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參數(shù)資料
| 型號： | NTE353 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor RF Power Output PO = 4W @ 175MHz |
| 中文描述： | 硅NPN晶體管輸出功率保\u003d 4瓦@ 175MHz時 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 20K |
| 代理商： | NTE353 |
NTE353
Silicon NPN Transistor
RF Power Output
P
O
= 4W @ 175MHz
Description:
The NTE353 is designed for 12.5 Volt VHF large–signal amplifier applications required in military and
industrial equipment operating to 250MHz.
Features:
Balanced Emitter Construction with Isothermal Resistor Design to Provide the Designer with
the Optimum in Transistor Ruggedness.
Low lead Inductance Stripline Packaging for Easier Design and Increased Broadband Capabilities
Flange Package for Easy Mounting and Better Thermal Conductivity to Heat Sink.
Exceptional Power Output Stability versus Temperature.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Collector Current–Continuous, I
C
Total Device Dissipation (T
C
= +25
°
C, Note 1), P
D
Derate Above 25
°
C
Storage Temperature Range, T
stg
Note 1. This device is designed for RF operation. The total device dissipation rating applies only
when the device is operated as an RF amplifier.
18V
36V
4V
1A
8W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
45.7mW/
°
C
–65
°
to +200
°
C
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CES
V
(BR)EBO
I
CBO
I
CES
I
C
= 10mA, I
B
= 0
I
C
= 5mA, V
BE
= 0
I
E
= 1mA, I
C
= 0
V
CB
= 15V, I
E
= 0
V
CE
= 15V, V
BE
= 0, T
C
= +55
°
C
18
–
–
V
36
–
–
V
Emitter–Base Breakdown Voltage
4
–
–
V
μ
A
mA
Collector Cutoff Current
–
–
250
–
–
5
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| NTE354 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Silicon NPN Transistor RF Power Output PO = 15W @ 175MHz |
| NTE355 | 制造商:NTE 制造商全稱:NTE Electronics 功能描述:Silicon NPN Transistor RF Power Output PO = 30W @ 175MHz |
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