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參數(shù)資料
| 型號(hào)： | NTE315 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor, Medium Power Amp |
| 中文描述： | 硅NPN晶體管，中功率放大器 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 20K |
| 代理商： | NTE315 |
NTE315
Silicon NPN Transistor,
Medium Power Amp
Features:
AF – HF Medium Power Amplifier
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–to–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–to–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–to–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current. I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
thJA
100V
50V
6V
1A
0.5A
750mW
+120
°
C
–50
°
to +150
°
C
126
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector Cutoff Current
I
CBO
I
EBO
V
BE
V
CEO(sus)
I
C
= 2mA
V
CE(sat)
V
BE(sat)
h
FE1
h
FE2
|h
fe
|
V
CB
= 25V, I
E
= 0
V
EB
= 6V, I
C
= 0
V
CE
= 6V, I
C
= 5mA
–
–
0.2
μ
A
μ
A
Emitter Cutoff Current
–
–
0.2
Base to Emitter Voltage
–
–
0.7
V
Collector–Emitter Sustaining Voltage
50
–
–
V
Collector–Emitter Saturation Voltage
I
C
= 1A, I
B
= 50mA
I
C
= 1A, I
B
= 50mA
V
CE
= 2V, I
C
= 100mA
V
CE
= 1V, I
C
= 1A
V
CB
= 2V, I
E
= –10mA,
f = 10MH
Z
V
CB
= 10V, I
E
= 0, f = 1MH
Z
–
–
0.3
V
Base–Emitter Saturation Voltage
–
–
1.0
V
DC Current Gain
199
–
649
70
–
–
Small Signal Current Gain
–
18
–
dB
Collector Output Capacitance
C
C
–
16
40
pf
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