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參數(shù)資料
| 型號： | NTE3099 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Infrared Emitting Diode Bi-Directional |
| 中文描述： | 紅外發(fā)光二極管雙向 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 19K |
| 代理商： | NTE3099 |
NTE3099
Infrared Emitting Diode
Bi–Directional
Features:
Bi–Directional Light Emission Type
High Output:
e
= 1mW Typ at I
F
= 20mA
Applications:
Light Source for Tape End Detector for VHS type VCR’s
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Power Dissipation, P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Forward Current, I
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Current (Note 1), I
FM
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Reverse Voltage, V
R
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
opr
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, Note 2), T
L
75mW
50mA
1A
6V
–25
°
to +85
°
C
–40
°
to +85
°
C
+260
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Pulse Width
≤
100
μ
s, Duty Ratio = 0.01
Note 2. For 3 seconds at a distance of 2.5mm from the bottom face of the resin package.
Electro–Optical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Forward Voltage
V
F
Peak Forward Voltage
V
FM
Reverse Current
I
R
Terminal Capacitance
C
t
Radiant Flux
Test Conditions
I
F
= 20mA
I
FM
= 500mA
V
R
= 3V
V = 0, f = 1MHz
I
F
= 20mA
I
F
= 5mA
I
F
= 5mA
Min
–
–
–
–
0.7
Typ
1.2
3.0
–
50
1.0
Max
1.4
4.0
10
100
2.0
Unit
V
V
μ
A
pF
mW
e
Peak Emission Wavelength
Half Intensity Wavelength
λ
p
λ
–
–
950
45
–
–
nm
nm
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