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參數(shù)資料
| 型號(hào)： | NTE3088 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Optoisolator Silicon NPN High Voltage Phototransistor Output |
| 中文描述： | 光隔離器npn型高壓硅光電晶體管輸出 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 22K |
| 代理商： | NTE3088 |
NTE3088
Optoisolator
Silicon NPN High Voltage
Phototransistor Output
Description:
The NTE3088 is a gallium arsenide LED optically coupled to a high voltge, silicon phototransistor in
a 6–Lead DIP type package designed for applications requiring high voltage output. This device is
particularly useful in copy machines and solid state relays.
Features:
High Voltage: 300V
High Isolation Voltage: V
ISO
= 7500V (Peak)
Absolute Maximum Ratings:
(T
A
= +25
°
C, unless otherwise specified)
Input LED
Continuous Forward Current, I
F
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak Forward Current (Pulse Width = 1
μ
s, 330pps), I
F
LED Power Dissipation (T
A
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Transistor
Collector–Emitter Voltage, V
CER
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Collector Voltage, V
ECO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Detector Power Dissipation (T
A
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device
Isolation Surge Voltage (Peak AC Voltage, 60Hz, 1sec Duration, Note 1), V
ISO
Total Device Power Dissipation (T
A
= +25
°
C), P
D
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering for 10sec), T
L
Note 1. Isolation surge voltage is an internal device dielectric breakdown rating.
60mA
1.2A
120mW
1.41mW/
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300V
300V
7V
100mA
150mW
1.76mW/
°
C
7500V
250mW
2.94mW/
°
C
–55
°
to +100
°
C
–55
°
to +150
°
C
. . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+260
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
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