參數(shù)資料
型號(hào)： NTE2643
廠商： NTE Electronics, Inc.
英文描述： Silicon NPN Transistor, VHF/UHF Low Noise Amp (Surface Mount)
中文描述： 硅NPN晶體管，甚高頻/超高頻低噪聲放大器（表面貼裝）
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 22K
代理商： NTE2643
NTE2643
Silicon NPN Transistor,
VHF/UHF Low Noise Amp
(Surface Mount)
Features:
Low Noise Figure, High Gain
NF = 1.1dB, |S
21e
|
2
= 13dB (f = 1GHz)
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
20V
12V
3V
80mA
40mA
100mW
+125
°
C
–55
°
to +125
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Collector Cutoff Current
I
CBO
Emitter Cutoff Current
I
EBO
DC Current Gain
h
FE
Output Capacitance
C
ob
Reverse Transfer Capacitance
C
re
Transition Frequency
f
T
Insertion Gain
|S
21e
|
2
Test Conditions
Min
–
–
80
–
–
5
–
9.5
–
–
Typ
–
–
–
1.1
0.65
7
18
13.0
1
1.1
Max
1
1
240
1.6
1.05
–
–
–
–
2.0
Unit
μ
A
μ
A
V
CB
= 10V, I
E
= 0
V
EB
= 1V, I
C
= 0
V
CE
= 10V, I
C
= 20mA
V
CB
= 10V, I
E
= 0, f = 1MHz, Note 1
pF
pF
GHz
dB
dB
dB
dB
V
CE
= 10V, I
C
= 20mA
V
CE
= 10V, I
C
= 20mA, f = 500MHz
V
CE
= 10V, I
C
= 20mA, f = 1GHz
V
CE
= 10V, I
C
= 5mA, f = 500MHz
V
CE
= 10V, I
C
= 5mA, f = 1GHz
Noise Figure
NF
Note 1. C
re
is measured by 3 terminal method with capacitance bridge.
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