參數(shù)資料
型號： NTE2410
廠商： NTE Electronics, Inc.
英文描述： Silicon NPN Transistor High Voltage Amp/Driver (Comp to NTE2411)
中文描述： 硅NPN晶體管高壓放大器/驅(qū)動器（Comp到NTE2411）
文件頁數(shù)： 1/2頁
文件大小： 21K
代理商： NTE2410
NTE2410
Silicon NPN Transistor
High Voltage Amp/Driver
(Comp to NTE2411)
Description:
The NTE2410 is a silicon NPN transistor in an SOT–23 type surface mount case designed for use
in high voltage applications.
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Continuous Collector Current, I
C
Total Power Dissipation (T
A
= +25
°
C, FR–5 Board, Note 1), P
D
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
thJA
Total Power Dissipation (T
A
= +25
°
C, Alumina Substrate, Note 2), P
D
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
thJA
Operating Junction Temperature Range, T
J
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. FR–5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm).
Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina.
160V
180V
6V
600mA
225mW
1.8mW/
°
C
556
°
C/mW
300mW
2.4mW/
°
C
417
°
C/mW
–55
°
to +150
°
C
–55
°
to +150
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
C
= 1mA, I
B
= 0, Note 3
I
C
= 100
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 120V, I
E
= 0
V
CB
= 120V, I
E
= 0, T
A
= +100
°
C
V
EB
= 4V, I
C
= 0
160
–
–
V
Collector–Base Breakdown Voltage
180
–
–
V
Emitter–Base Breakdown Voltage
6
–
–
V
Collector Cutoff Current
–
–
50
nA
μ
A
nA
–
–
50
Emitter Cutoff Current
I
EBO
–
–
50
Note 3. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle = 2%.
相關(guān)PDF資料
PDF描述
NTE2412 Silicon NPN Transistor General Purpose, High Voltage Amp, (Compl to NTE2413)
NTE2413 Silicon PNP Transistor General Purpose, High Voltage Amp, (Compl to NTE2412)
NTE2414 Silicon Complementary Transistors Digital w/2 Built-In Bias 10k Resistors (Surface Mount)
NTE2416 Silicon Complementary Transistors High Current General Purpose Amp/Switch
NTE106 Silicon PNP Transistor Switching Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTE2411 制造商:NTE Electronics 功能描述:T-PNP-SI HI VLTG AMP 制造商:NTE Electronics 功能描述:SOT-23 PNP HV AMP 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 150V 0.5A 3-Pin SOT-23
NTE2412 制造商:NTE Electronics 功能描述:T-NPN-SI HI VLTG AMP 制造商:NTE Electronics 功能描述:Trans GP BJT NPN 300V 0.1A 3-Pin SOT-23
NTE2413 制造商:NTE Electronics 功能描述:T-PNP-SI HI VLTG AMP 制造商:NTE Electronics 功能描述:SOT-23 PNP GP HI-V
NTE2414 制造商:NTE Electronics 功能描述:T-NPN-SI WITH 10K RES
NTE2415 制造商:NTE Electronics 功能描述:TRANSISTOR PNP SILICON 50V IC=0.1A SOT-23 CASE DIGITAL TRANSISTOR W/2 10K RESIST 制造商:NTE Electronics 功能描述:T-PNP-SI WITH 10K RES 制造商:NTE Electronics 功能描述:SOT-23 PNP DIGITAL
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