參數(shù)資料
型號： NTE2384
廠商： NTE Electronics, Inc.
英文描述： Quad Differential Comparator 14-TSSOP -40 to 125
中文描述： MOSFET的N溝道增強模式，高速開關
文件頁數(shù)： 1/2頁
文件大?。?/td> 24K
代理商： NTE2384
NTE2384
MOSFET
N–Channel Enhancement Mode,
High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V
DS
Drain–Gate Voltage (R
GS
= 20k
), V
DGR
Gate–Source Voltage, V
GS
Pulsed Drain Current (T
C
= +25
°
C), I
DM
Continuous Drain Current, I
D
T
C
= +30
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +100
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Dissipation (T
C
= +25
°
C), P
tot
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Thermal Resistance, Junction–to–Case, R
thJC
Typical Thermal Resistance, Junction–to–Ambient, R
thJA
800V
800V
±
20V
24A
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6.0A
3.9A
125W
+150
°
C
–55
°
to +150
°
C
1.0
°
C/W
35
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static Characteristics
Drain–Source Breakdown Voltage
V
(BR)DSS
I
DSS
I
D
= 250
μ
A, V
GS
= 0
V
GS
= 0, V
DS
= 800V, T
J
= +25
°
C
V
GS
= 0, V
DS
= 800V, T
J
= +125
°
C
V
DS
= 0, V
GS
=
±
20V
V
DS
= V
GS
, I
D
= 1mA
V
GS
= 10V, I
D
= 3A
800
–
–
V
μ
A
mA
Zero–Gate Voltage Drain Current
–
20
250
–
0.1
1.0
Gate–Body Leakage Current
I
GSS
V
GS(th)
R
DS(on)
–
10
100
nA
Gate Threshold Voltage
2.1
3.0
4.0
V
Static Drain–Source On Resistance
–
1.3
1.5
Dynamic Characteristics
Forward Transconductance
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
DS
= 25V, I
D
= 3A
V
DS
= 25V, V
GS
= 0, f = 1MHz
1.8
3.0
–
mho
Input Capactiance
–
3900
5000
pf
Output Capacitance
–
200
350
pf
Reverse Transfer Capactiance
–
80
140
pf
Turn–On Time
V
DD
= 30V, I
D
= 2.6A, V
GS
= 10V,
R
GS
= 50
, R
gen
= 50
–
60
90
ns
Rise Time
–
90
140
ns
Turn–Off Delay Time
–
330
430
ns
Fall Time
–
110
140
ns
相關PDF資料
PDF描述
NTE2385 Quad Differential Comparator 14-TSSOP -40 to 125
NTE2386 MOSFET N-Channel Enhancemen Mode, High Speed Switch
NTE2387 Quad Differential Comparator 14-TSSOP -40 to 125
NTE2388 Quad Differential Comparator 14-TSSOP -40 to 125
NTE2389 Quad Differential Comparator 14-TSSOP -40 to 125
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