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參數(shù)資料
| 型號： | NTE2366 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Micropower Voltage Reference 3-TO-92 -40 to 85 |
| 中文描述： | 硅PNP晶體管高壓視頻放大器（并發(fā)癥的NTE399） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 19K |
| 代理商： | NTE2366 |
NTE2366
Silicon PNP Transistor
High Voltage Video Amp
(Compl to NTE399)
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
j
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
300V
300V
5V
100mA
200mA
1.0W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
μ
A
μ
A
V
Collector Cutoff Current
I
CBO
I
EBO
V
CB
= 200V, I
E
= 0
V
EB
= 4V, I
C
= 0
–
–
0.1
Emitter Cutoff Current
–
–
0.1
Collector–Base Breakdown Voltage
V
(BR)CBO
I
C
= 10
μ
A, I
E
= 0
V
(BR)CEO
I
C
= 1mA, R
BE
=
∞
V
(BR)EBO
I
E
= 10
μ
A, I
C
= 0
h
FE
V
CE
= 10V, I
C
= 10mA
V
CE(sat)
I
C
= 20mA, I
B
= 2mA
V
BE(sat)
I
C
= 20mA, I
B
= 2mA
f
T
V
CE
= 30V, I
C
= 10mA
C
ob
V
CB
= 30V, f = 1MHz
C
re
V
CB
= 30V, f = 1MHz
300
–
–
Collector–Emitter Breakdown Voltage
300
–
–
V
Emitter–Base Breakdown Voltage
5
–
–
V
DC Current Gain
40
–
320
Collector–Emitter Saturation Voltage
–
–
0.6
V
Base–Emitter Saturation Voltage
–
–
1.0
V
Current Gain–Bandwidth Product
–
150
–
MHz
Capacitance
–
2.6
–
pF
Reverse Transfer Capacitance
–
1.8
–
pF
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