參數(shù)資料
型號(hào)： NTE2351
廠(chǎng)商： NTE Electronics, Inc.
英文描述： Silicon Complementary Transistors Darlington Power Amp, Switch
中文描述： 硅達(dá)林頓晶體管互補(bǔ)功率放大器，開(kāi)關(guān)
文件頁(yè)數(shù)： 1/2頁(yè)
文件大小： 24K
代理商： NTE2351
NTE2351 (NPN) & NTE2352 (PNP)
Silicon Complementary Transistors
Darlington Power Amp, Switch
Features:
High DC Current Gain: h
FE (1)
= 2000 Min @ V
CE
= 2V, I
C
= 1A
Low Saturation Voltage: V
CE(sat)
= 1.5V Max @ I
C
= 3A
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Power Dissipation, P
C
T
A
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
T
C
= +25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100V
80V
5V
4A
400mA
1W
15W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector Cut–Off Current
Emitter Cut–Off Current
Collector–Emitter Breakdown Voltage V
(BR)CEO
I
C
= 10mA, I
B
= 0
DC Current Gain
Symbol
I
CBO
I
EBO
Test Conditions
V
CB
= 100V, I
E
= 0
V
EB
= 5V, I
C
= 0
Min
–
–
80
2000
1000
–
–
Typ
–
–
–
–
–
–
–
Max
20
2.5
–
–
–
1.5
2.0
Unit
μ
A
mA
V
h
FE (1)
h
FE (2)
V
CE(sat)
V
BE(sat)
V
CE
= 2V, I
C
= 1A
V
CE
= 2V, I
C
= 3A
I
C
= 3A, I
B
= 6mA
I
C
= 3A, I
B
= 6mA
Collector–Emitter Saturation Voltage
Base–Emitter Saturation Voltage
Switching Characteristics
Turn–On Time
Storage Time
Fall Time
V
V
t
on
t
stg
t
f
V
CC
= 30V, I
B1
= –I
B2
= 6mA,
Duty Cycle
≤
1%
–
–
–
0.2
1.5
0.6
–
–
–
μ
s
μ
s
μ
s
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