參數(shù)資料
型號(hào)： NTE233
廠商： NTE Electronics, Inc.
英文描述： Quad Differential Comparator 14-PDIP -25 to 85
中文描述： 硅NPN晶體管視頻中頻，振蕩器
文件頁(yè)數(shù)： 1/2頁(yè)
文件大?。?/td> 20K
代理商： NTE233
NTE233
Silicon NPN Transistor
Video IF, Oscillator
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Collector Current, I
C
Total Power Dissipation (T
A
= +25
°
C), P
T
Derate above +25
°
C
Operating Junction Temperature, T
J
Storage Temperature Range, T
stg
Lead Temperature (During Soldering, 1/16”
±
1/32” from case, 10sec), T
L
30V
30V
3V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
100mA
625mW
5mW/
°
C
+150
°
C
–55
°
to +150
°
C
+230
°
C
. . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector Cutoff Current
Symbol
V
(BR)CBO
I
C
= 100
μ
A, I
E
= 0
V
(BR)EBO
I
E
= 10
μ
A, I
C
= 0
I
CBO
V
CB
= 30V, I
E
= 0
I
CEO
V
CE
= 30V, I
B
= 0
h
FE
I
C
= 10mA, V
CE
= 10V, Note 1
V
CE(sat)
I
C
= 20mA, I
B
= 0.1mA, Note 1
V
CEO(sus)
I
C
= 1mA, I
B
= 0, Note 1
f
T
I
C
= 10mA, V
CE
= 10V,
f = 100MHz
G
pe
I
C
= 10mA, V
CE
= 10V,
f = 45MHz
C
re
I
E
= 0, V
CB
= 10V, f
≤
1MHz
g
oe
I
C
= 10mA, V
CE
= 10V,
f = 45MHz
Test Conditions
Min
30
3
–
–
20
–
30
300
Typ
–
–
–
–
–
0.6
–
–
Max
–
–
50
1
100
–
–
700
Unit
V
V
nA
μ
A
DC Pulse Current Gain
Collector Saturation Voltage
Collector–Emitter Sustaining Voltage
Current Gain–Bandwidth Product
V
V
MHz
Power Gain, Fixed Neutralization
25
–
–
dB
Reverse Transfer Capacitance
Output Admittance, Input Short
Circuit
0.6
30
–
–
1.1
200
pF
μ
mho
Note 1. Pulse Test: Pulse Width = 300
μ
s, Duty Cycle = 1%.
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