參數(shù)資料
型號： NTE2330
廠商： NTE Electronics, Inc.
英文描述： Quad Differential Comparator 14-TSSOP -25 to 85
中文描述： 硅NPN晶體管高增益放大器瓦特/內部齊納二極管
文件頁數(shù)： 1/2頁
文件大?。?/td> 20K
代理商： NTE2330
NTE2330
Silicon NPN Transistor
High Gain Amp
w
/Internal Zener Diode
Features:
Excellent Wide Safe Operating Area
Included Avalanche Diode
High DC Current Gain
High Collector Power Dissipation Capability
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
Continuous
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Dissipation (T
C
= +25
°
C), P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
55 (+15, –10) V
55 (+15, –10) V
5V
4A
20A
80W
+150
°
C
–55
°
to +150
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Collector–Base Breakdown Voltage
V
(BR)CBO
V
(BR)CBO
I
EBO
h
FE
V
CE(sat)
I
C
= 10mA, I
E
= 0
I
C
= 100mA, I
B
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 5V, I
C
= 500mA
I
C
= 500mA, I
B
= 2mA
I
C
= 1A, I
B
= 20mA
V
CE
= 5V, I
C
= 500mA
45
55
70
V
Collector–Emitter Breakdown Voltage
45
55
70
V
μ
A
Emitter Cutoff Current
–
–
10
DC Current Gain
500
1000
2500
Collector–Emitter Saturation Voltage
–
–
2.0
V
–
–
3.0
V
Base–Emitter Voltage
V
BE
E
T
0.50
0.65
0.80
V
Allowable Energy
80
–
–
W.sec
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