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參數(shù)資料
| 型號(hào)： | NTE228A |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon NPN Transistor High Voltage Amp, Video Output |
| 中文描述： | 硅NPN晶體管高壓放大器，視頻輸出 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 23K |
| 代理商： | NTE228A |
NTE228A
Silicon NPN Transistor
High Voltage Amp, Video Output
Description:
The NTE228A is a silicon NPN transistor in a TO202M type package designed for high–voltage TV video
and chroma output circuits, high–voltage linear amplifiers, and high–voltage transistor regulators.
Features:
High Collector–Emitter Breakdown Voltage: V
(BR)CEO
= 350V (Min) @ I
C
= 1mA
Low Collector–Emitter Saturation Voltage: V
CE(sat)
= 600mV (Max) @ I
C
= 20mA
Low Collector–Emitter Capacitance: C
cb
= 3pF (Max) @ V
CB
= 30V
2 Watts Free Air Dissipation @ T
A
= +25
°
C
Absolute Maximum Ratings:
Collector–Emitter Voltage, V
CEO
Collector–Base Voltage, V
CBO
Emitter–Base Voltage, V
EBO
Collector Current, I
C
Continuous
Peak
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Base Current, I
B
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
A
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Power Dissipation (T
C
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Ambient, R
thJA
Thermal Resistance, Junction–to–Case, R
thJC
Lead Temperature (During Soldering, 1/16” from case, 10sec), T
L
350V
450V
6V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mA
700mA
250mA
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
2W
16mW/
°
C
10W
80mW/
°
C
–55
°
to +150
°
C
–55
°
to +150
°
C
62.5
°
C/W
12.5
°
C/W
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . .
+250
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Collector–Emitter Breakdown Voltage
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
EBO
I
C
= 1mA, I
B
= 0
I
C
= 100
μ
A, I
E
= 0
I
E
= 100
μ
A, I
C
= 0
V
CB
= 250V, I
E
= 0
V
BE
= 5V, I
C
= 0
350
–
–
V
Collector–Base Breakdown Voltage
450
–
–
V
Emitter–Base Breakdown Voltage
6
–
–
V
μ
A
μ
A
Collector Cutoff Current
–
–
0.2
Emitter Cutoff Current
–
–
0.1
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