- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄363686 > NTE21256 (NTE Electronics, Inc.) 262,144-Bit Dynamic Random Access Memory (DRAM) PDF資料下載
參數(shù)資料
| 型號(hào)： | NTE21256 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | 262,144-Bit Dynamic Random Access Memory (DRAM) |
| 中文描述： | 262,144位動(dòng)態(tài)隨機(jī)存取記憶體（DRAM） |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 42K |
| 代理商： | NTE21256 |
NTE21256
262,144–Bit Dynamic Random
Access Memory (DRAM)
Description:
The NTE21256 is a 262,144 word by 1–bit dynamic Random Access Memory. This 5V–only component
is fabricated with N–channel silicon gate technology.
Nine multiplexed address inputs permit the NTE21256 to be packaged in an industry standard
16–Lead DIP package. Features of this device include single power supply with
±
10% tolerance, on–
chip address, date registers which eliminate the need for interface registers, and fully TTL compatible
inputs and outputs, including clocks.
In addition to the usual read, write, and read–modify–write cycles, the NTE21256 is capable of early
and late write cycles, RAS–only refresh, and hidden refresh. Common I/O capability is given by using
early write operation.
The NTE21256 also features page mode which allows high–speed random access of bits in the same
row.
Features:
262,144 x 1–Bit Organization
Single +5V Supply,
±
10% Tolerance
Low Power Dissipation:
–385mW active (Max)
–28mW standby (Max)
Access Time: 150ns
Cycle Time: 260ns
All Inputs and Outputs TTL Compatible
On–Chip Substrate Bias Generator
Three–State Data Output
Read, Write, Read–Modify–Write, RAS–Only–Refresh, Hidden Refresh
Common I/O Capability using “Early Write” Operation
Page Mode Read and Write, Read–Write
256 Refresh Cycles with 4ms Refresh Period
Absolute Maximum Ratings:
(Note 1)
Operating Temperature Range, T
opr
Storage Temperature Range, T
stg
Voltage on any pin relative to V
SS
Power Dissipation, P
D
Data Out Current (Short Circuit)
Note 1. Stresses above those listed under “Absolute Maximum Ratings” may cause permanent
damage to the device. Exposure to absolute maximum rating conditions for extended periods
may affect device reliability.
0
°
to +70
°
C
–65
°
to +150
°
C
–1 to +7V
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
1W
50mA
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTE213 | Germanium PNP Transistor High Power, High Gain Amplifier |
| NTE214 | Silicon NPN Transistor Darlington Driver |
| NTE215 | Silicon NPN Transistor Darlington Driver |
| NTE216 | Silicon NPN Transistor High Speed Switch, Core Driver |
| NTE218 | Silicon PNP Transistor Audio Power Output |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTE2128 | 制造商:NTE 制造商全稱(chēng):NTE Electronics 功能描述:MICROPROCESSOR & MEMORY CIRCUITS |
| NTE213 | 制造商:NTE Electronics 功能描述:TO-36 PNP HI-PWR/GN 制造商:NTE Electronics 功能描述:Trans GP BJT PNP 60V 30A 3-Pin TO-36 |
| NTE214 | 制造商:NTE Electronics 功能描述:TRANSISTOR NPN SILICON 70VC IC=10A TO-3P CASE DARLNGTON DRIVER TF=1.8US 制造商:NTE Electronics 功能描述:T-NPN-SI DARLINGTON DR 制造商:NTE Electronics 功能描述:DARL DRVR NPN TO-3P |
| NTE2147 | 制造商:NTE Electronics 功能描述:4K X 1 SRAM 55NS 制造商:NTE Electronics 功能描述:IC, SRAM, 4KBIT, 55NS, 18-DIP; Memory Size:4Kbit; Memory Configuration:4K x 1; Supply Voltage Min:4.5V; Supply Voltage Max:5.5V; Memory Case Style:DIP; No. of Pins:18; Access Time:55ns; Operating Temperature Min:-10C |
| NTE215 | 制造商:NTE Electronics 功能描述:T-NPN-SI DARLINGTON DR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。