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參數(shù)資料
| 型號(hào)： | NTE181 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 30 A, 90 V, NPN, Si, POWER TRANSISTOR, TO-3 |
| 文件頁(yè)數(shù)： | 2/2頁(yè) |
| 文件大?。?/td> | 23K |
| 代理商： | NTE181 |
Electrical Characteristics (Cont’d): (TC =+25°C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max Unit
ON Characteristics (Note 1)
DC Current Gain
hFE
IC = 7.5A, VCE = 2V
25
–
100
Base–Emitter ON Voltage
VBE(on)
IC = 7.5A, VCE = 2V
–
1.3
V
Collector–Emitter Saturation Voltage
VCE(sat) IC = 7.5A, IB = 750mA
–
0.8
V
Base–Emitter Saturation Voltage
VBE(sat) IC = 7.5A, IB = 750mA
–
1.3
V
Dynamic Characteristics
Current Gain–Bandwidth Product
fT
IC = 1A, VCE = 10V, f = 1MHz
2.0
–
MHz
Note 1. Pulse Test: Pulse Width
≤ 300s. Duty Cycle ≤ 2%.
Note 2. NTE181MP is a matched pair of NTE181 with their DC Current Gain (hFE) matched to within
10% of each other.
Note 3. NTE180MCP is a matched complementary pair containing 1 each of NTE180 (PNP) and
NTE181 (NPN).
1.187 (30.16)
.875 (22.2)
Dia Max
.665
(16.9)
.430
(10.92)
Seating
Plane
.040 (1.02)
.312 (7.93) Min
.135 (3.45) Max
.350 (8.89)
Emitter
Collector/Case
Base
.215 (5.45)
.525 (13.35) R Max
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
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