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參數(shù)資料
| 型號： | NTE160 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Quad Differential Comparator 14-TSSOP 0 to 70 |
| 中文描述： | 鍺PNP晶體管射頻，中頻放大器，混頻器振蕩器調(diào)頻 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | NTE160 |
NTE160
Germanium PNP Transistor
RF–IF Amp, FM Mixer OSC
Description:
The NTE160 is a germanium mesa PNP transistor in a TO72 metal case designed for use as a pream-
plifier mixer and oscillator up to 900MHz.
Absolute Maximum Ratings:
Collector–Emitter Voltage (V
BE
= 0), V
CES
Collector–Emitter Voltage, (I
B
= 0), V
CEO
Emitter–Base Voltage (I
C
= 0), V
EBO
Collector Current, I
C
Total Power Dissipation (T
A
= +45
°
C), P
tot
Operating Junction Temperature, T
J
Storage Temperature Range, T
stg
Thermal Resistance, Junction–to–Case, R
thJC
Thermal Resistance, Junction–to–Ambient, R
thJA
20V
16V
0.3V
10mA
60mW
+90
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–30
°
to +75
°
C
400
°
C/W max
750
°
C/W max
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
μ
A
μ
A
μ
A
mV
mV
Collector Cutoff Current
I
CES
I
CEO
I
EBO
V
BE
V
CE
= –20V, V
BE
= 0
V
CE
= –15V, I
B
= 0
V
EB
= –0.3V, I
C
= 0
I
C
= –2mA, V
CE
= –10V
I
C
= –5mA, V
CE
= –5V
I
C
= –2mA, V
CE
= –10V
I
C
= –5mA, V
CE
= –5V
I
C
= –2mA, V
CE
= –10V, f = 100MHz
I
C
= –2mA, V
CE
= –10V, f = 450kHz
I
C
= –2mA, V
CE
= –10V, R
g
= 60
,
f = 800MHz
I
C
= –2mA, V
CE
= –10V, R
L
= 2k
,
f = 800MHz
–
–
–
–
–
–
–
–
–
–
–
–
–
–8
–500
–100
–
–
–
–
–
–
6
Emitter Cutoff Current
Base–Emitter Voltage
–350
–400
50
42
700
0.23
5
DC Current Gain
h
FE
Transition Frequency
Reverse Capacitance
Noise Figure
f
T
MHz
pF
dB
–C
re
NF
Power Gain
G
pb
11
14
–
dB
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