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參數資料
| 型號： | NTE16003 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Quad Differential Comparator 14-SSOP 0 to 70 |
| 中文描述： | 硅NPN晶體管射頻輸出功率，寶\u003d 7瓦，175MHz時 |
| 文件頁數： | 1/4頁 |
| 文件大?。?/td> | 22K |
| 代理商： | NTE16003 |
NTE16003
Silicon NPN Transistor
RF Power Output, P
O
= 7W, 175MHz
Description:
The NTE16003 is an RF power transistor in a TO60 type case that employs a multi emitter electrode
design. This feature together with a heavily diffused base matrix located between the individual emit-
ters results in high RF current handling capability, high power gain, low base resistance, and low out-
put capacitance. This device is intended for Class A, B, or C amplifier, oscillator, or frequency multipli-
er circuits and is specifically designed for operation in the VHF–UHF region.
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CEO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
(max)
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Thermal Resistance, Junction–to–Case, R
thJC
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
65V
40V
4V
1.5A
11.6W
66.4mW/
°
C
–65
°
to +200
°
C
–65
°
to +200
°
C
+15
°
C/W
Electrical Characteristics:
(T
C
= +25
°
C unless otherwise specified)
Parameter
Collector Cutoff Current
Collector–Base Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage V
(BR)CEO
I
C
= 0 to 200mA, I
B
= 0, Note 1
Collector–Emitter Breakdown Voltage V
(BR)CEV
I
C
= 0 to 200mA, V
BE
= –1.5V,
Symbol
I
CEO
V
(BR)CBO
I
C
= 0.1mA, I
E
= 0
V
(BR)EBO
I
E
= 0.1mA, I
C
= 0
Test Conditions
V
CE
= 30V, I
B
= 0
Min
–
65
4
40
65
Typ
–
–
–
–
–
Max
0.1
–
–
–
–
Unit
mA
V
V
V
V
Note 1
V
CB
= 30V, I
C
= 0, f = 1MHz
V
CE
= 28V, I
C
= 150mA,
f = 100MHz
f = 175MHz, V
CE
= 28V,
P
IN
= 1W
Output Capacitance
Current Gain–Bandwidth Product
C
ob
f
T
–
–
–
10
–
pF
MHz
500
RF Power Output, Class C,
Unneutralized
P
out
3
–
–
W
Note 1. Pulsed through 25mH inductor, Duty Factor = 50%
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