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參數(shù)資料
| 型號： | NTE132 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Silicon N-Channel JFET Transistor VHF Amplifier, Mixer |
| 中文描述： | 硅N溝道場效應(yīng)晶體管高頻放大器，混頻器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 20K |
| 代理商： | NTE132 |
NTE132
Silicon N–Channel JFET Transistor
VHF Amplifier, Mixer
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Drain–Gate Voltage, V
DG
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate–Source Voltage, V
GS
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gate Current, I
G
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= 25
°
C), P
D
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25
°
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Lead Temperature (During Soldering, 1/16” from case for 10sec), T
L
25V
–25V
10mA
200mW
2mW/
°
C
–55
°
to +150
°
C
–55
°
to +150
°
C
+260
°
C
. . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Gate–Source Breakdown Voltage
V
(BR)GSS
I
G
= 1
μ
A, V
DS
= 0
I
GSS
V
GS
= 15V, V
DS
= 0
V
GS
= 15V, V
DS
= 0, T
A
= +100
°
C
V
GS(off)
I
D
= 2nA, V
DS
= 15V
V
GS
I
D
= 50
μ
A, V
DS
= 15V
I
DSS
V
DS
= 15V, V
GS
= 0
g
fs
V
DS
= 15V, V
GS
= 0, f = 1kHz
|y
fs
|
V
DS
= 15V, V
GS
= 0, f = 100MHz
|y
os
|
V
DS
= 15V, V
GS
= 0, f = 1kHz
–25
–
–
V
Gate Reverse Current
–
–
–2
nA
–
–
–2
nA
Gate–Source Cutoff Voltage
–
–
–8
V
Gate–Source Voltage
–0.5
–
–7.5
V
Zero–Gate–Voltage Drain Current
2
–
20
mA
μ
mho
μ
mho
μ
mho
Forward Transconductance
2500
–
7000
Forward Transfer Admittance
2000
–
–
Output Admittance
–
–
50
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