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參數(shù)資料
| 型號(hào)： | NTE1192 |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Integrated Circuit VCO for Phase Lock Loop(PLL) |
| 中文描述： | 集成電路壓控振蕩器鎖相環(huán)路（PLL） |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 21K |
| 代理商： | NTE1192 |
NTE466
Silicon N–Channel JFET Transistor
Chopper, High Speed Switch
Absolute Maximum Ratings:
Drain–Source Voltage, V
DS
Drain–Gate Voltage, V
DG
Reverse Gate–Source Voltage, V
GSR
Forward Gate Current, I
G(f)
Total Device Dissipation (T
A
= +25
°
C), P
D
Derate Above 25
°
C
Storage Temperature Range, T
stg
40V
40V
–40V
50mA
360mW
2.4mW/
°
C
–65
°
to +175
°
C
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Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
OFF Characteristics
Gate–Source Breakdown Voltage
V
(BR)GSS
I
G
= 1A, V
DS
= 0
I
GSS
V
GS
= –20V, V
DS
= 0
V
GS
= –20V, V
DS
= 0, T
A
= +150
°
C
V
GS(off)
V
DS
= 15V, I
D
= 0.5nA
I
D(off)
V
DS
= 15V, V
GS
= –10V
V
DS
= 15V, V
GS
= –10V, T
A
= +150
°
C
–40
–
–
V
Gate Reverse Current
–
–
0.25
nA
μ
A
V
–
–
0.5
Gate–Source Cutoff Voltage
–4
–
–10
Drain Cutoff Current
–
–
0.25
nA
μ
A
–
–
0.5
ON Characteristics
Zero–Gate–Voltage Drain Current
I
DSS
V
DS(on)
V
DS
= 15V, V
GS
= 0, Note 1
I
D
= 20mA, V
GS
= 0
50
–
–
mA
Drain–Source ON–Voltage
–
–
0.75
V
Small–Signal Characteristics
Drain–Source “ON” Resistance
r
DS(on)
C
iss
C
rss
V
GS
= 0, I
D
= 0, f = 1kHz
V
DS
= 0, V
GS
= –10V, f = 1MHz
V
DS
= 0, V
GS
= –10V, f = 1MHz
–
–
25
pF
Input Capacitance
–
–
18
Reverse Transfer Capacitance
–
–
0.8
pF
Switching Characteristics
(Note 2)
Turn–On Delay Time
t
d(on)
t
r
t
off
V
DD
= 10V, I
D(on)
= 20mA,
V
GS(on)
= 0, V
GS(off)
= –10V
–
–
6
ns
Rise Time
–
–
3
ns
Turn–Off Time
–
–
25
ns
Note 1. Pulse Test: Pulse Width = 100ms, Duty Cycle
≤
10%.
Note 2. The I
D(on)
values are nominal; exact values vary slightly with transistor parameters.
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