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參數(shù)資料
| 型號： | NTE102A |
| 廠商： | NTE Electronics, Inc. |
| 英文描述： | Germanium Complementary Transistors Medium Power Amplifier |
| 中文描述： | 鍺晶體管中等互補(bǔ)功率放大器 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 19K |
| 代理商： | NTE102A |
NTE102A (PNP) & NTE103A (NPN)
Germanium Complementary Transistors
Medium Power Amplifier
Description:
The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type
package designed for use as a medium power amplifier.
Absolute Maximum Ratings:
(T
A
= +25
°
C unless otherwise specified)
Collector–Base Voltage, V
CBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Power Dissipation, P
C
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature, T
J
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
32V
10V
1A
650mW
+90
°
C
–55
°
to +90
°
C
Electrical Characteristics:
(T
A
= +25
°
C unless otherwise specified)
Parameter
Symbol
Test Conditions
I
C
= 200
μ
A, I
E
= 0
V
CB
= 10V, I
E
= 0
V
CB
= 0, I
E
= 50mA
V
CB
= 0, I
E
= 300mA
V
CB
= 2V, I
E
= 10mA
I
C
= 500mA, I
B
= 50mA
V
CB
= 5V, I
E
= 5mA, f = 1kHz
Min
Typ
Max
Unit
Collector–Base Voltage
Collector Cutoff Current
DC Current Gain
V
CBO
I
CBO
h
FE1
h
FE2
f
α
e
V
CE(sat)
NF
32
–
63
69
10
–
–
–
–
–
–
–
–
V
μ
A
25
295
273
–
–
25
Common–Emitter Cutoff Frequency
Collector–Emitter Saturation Voltage
Noise Figure
kHz
V
dB
0.17
–
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|---|---|
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