參數(shù)資料
型號(hào)： NTD85N02R
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET 85 Amps, 24 Volts N-Channel DPAK(85A，24V，N溝道，DPAK封裝的功率MOSFET)
中文描述： 85 A, 24 V, 0.0052 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369AA, DPAK-3
文件頁(yè)數(shù)： 1/10頁(yè)
文件大?。?/td> 73K
代理商： NTD85N02R
Semiconductor Components Industries, LLC, 2004
September, 2004 Rev. 6
1
Publication Order Number:
NTD85N02R/D
NTD85N02R
Power MOSFET
85 Amps, 24 Volts
NChannel DPAK
Features
PbFree Packages are Available
Planar HD3e Process for Fast Switching Performance
Low R
DS(on)
to Minimize Conduction Loss
Low C
iss
to Minimize Driver Loss
Low Gate Charge
MAXIMUM RATINGS
(T
J
= 25
°
C Unless otherwise specified)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
24
V
dc
GatetoSource Voltage Continuous
V
GS
±
20
V
dc
Thermal Resistance JunctiontoCase
Total Power Dissipation @ T
C
= 25
°
C
Drain Current
Continuous @ T
C
= 25
°
C, Limited by Package
Continuous @ T
A
= 25
°
C, Limited by Wires
Single Pulse (t
p
≤
10 s)
R
JC
P
D
I
D
I
D
I
DM
1.6
78.1
85
32
96
°
C/W
W
A
A
A
Thermal Resistance, JunctiontoAmbient
(Note 1)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current Continuous @ T
A
= 25
°
C
R
JA
P
D
I
D
52
2.4
16
°
C/W
W
A
Thermal Resistance, JunctiontoAmbient
(Note 2)
Total Power Dissipation @ T
= 25
°
C
Drain Current Continuous @ T
A
= 25
°
C
R
JA
P
D
I
D
100
1.25
12
°
C/W
W
A
Operating and Storage Temperature Range
T
J
, T
stg
55 to
150
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
= 30 V
dc
, V
= 10 V
dc
, I
L
= 13 A
pk
,
L = 1 mH, R
G
= 25 )
E
AS
85
mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from Case for 10 Seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 1 inch pad size,
(Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in
2
).
D
S
G
NChannel
V
DSS
R
DS(ON)
TYP
I
D
MAX
24 V
4.8 m
85 A
See detailed ordering and shipping information in the package
dimensions section on page 7 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
MARKING DIAGRAM
& PIN ASSIGNMENTS
DPAK
CASE 369C
STYLE2
DPAK3
CASE 369D
STYLE 2
1 2
3
4
123
4
Y
WW
85N02R = Specific Device Code
= Year
= Work Week
Y
8
N
4
1 Gate
2 Drain
3 Source
4 Drain
1
3
2
1
3
2
4
YWW
85
N02
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NTD85N02R-001 功能描述:MOSFET 24V 85A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD85N02R-1G 功能描述:MOSFET 24V 85A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD85N02RG 功能描述:MOSFET 24V 85A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD85N02RT4 功能描述:MOSFET 24V 85A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD85N02RT4G 功能描述:MOSFET 24V 85A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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