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參數(shù)資料
| 型號： | NTD5406N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 40 V, 70 A(40V, 70A, 功率MOSFET) |
| 中文描述： | 40 V的功率MOSFET，70甲（40V的，70A條，功率MOSFET的） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 106K |
| 代理商： | NTD5406N |
Semiconductor Components Industries, LLC, 2006
November, 2006
Rev. 1
1
Publication Order Number:
NTD5406N/D
NTD5406N
Power MOSFET
40 V, 70 A, Single N
Channel, DPAK
Features
Low R
DS(on)
High Current Capability
Low Gate Charge
These are Pb
Free Devices
Applications
Electronic Brake Systems
Electronic Power Steering
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Units
Drain
to
Source Voltage
V
DSS
V
GS
I
D
40
V
Gate
to
Source Voltage
±
20
V
Continuous Drain
Current
R
JC
(Note 1)
Steady
State
T
C
= 25
°
C
T
C
= 100
°
C
70
A
50
Power Dissipation
R
JC
(Note 1)
Pulsed Drain Current
Steady
State
T
C
= 25
°
C
P
D
100
W
t
p
= 10 s
I
DM
T
J
,
T
STG
I
S
EAS
150
A
Operating Junction and Storage Temperature
55 to
175
°
C
Source Current (Body Diode) Pulsed
63.5
A
Single Pulse Drain
to Source Avalanche
Energy
(V
DD
= 50 V, V
GS
= 10 V, I
PK
= 30 A,
L = 1 mH, R
G
= 25 )
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
450
mJ
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
THERMAL RESISTANCE RATINGS
(Note 1)
Parameter
Symbol
Max
Units
Junction
to
Case (Drain)
R
θ
JC
1.5
°
C/W
1. Surface mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces).
http://onsemi.com
MARKING
DIAGRAM
V
(BR)DSS
R
DS(ON)
TYP
I
D
MAX
(Note 1)
40 V
8.7 m
Ω
@ 10 V
70 A
DPAK
CASE 369C
STYLE 2
N
Channel
D
S
G
1
1 2
3
4
YWW
54
06NG
Device
Package
Shipping
ORDERING INFORMATION
NTD5406NG
DPAK
(Pb
Free)
75 Units / Rail
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Y
WW
5406N
G
= Year
= Work Week
= Specific Device Code
= Pb
Free Device
NTD5406NT4G
DPAK
(Pb
Free)
2500 / Tape & Reel
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD5406NG | 功能描述:MOSFET NFET 40V HD3E RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD5406NT4G | 功能描述:MOSFET NFET 40V HD3E RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD5407N | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 40 V, 38 A, Single N−Channel, DPAK |
| NTD5407NG | 功能描述:MOSFET NFET 40V 38A PB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD5407NT4G | 功能描述:MOSFET NFET 40V 38A PB RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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