- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄189272 > NTD18N06T4 TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 18A I(D) | TO-252AA PDF資料下載
參數(shù)資料
| 型號(hào)： | NTD18N06T4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 18A I(D) | TO-252AA |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 18A條（丁）|對(duì)252AA |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 88K |
| 代理商： | NTD18N06T4 |
Semiconductor Components Industries, LLC, 2001
September, 2001 – Rev. 1
1
Publication Order Number:
NTD18N06L/D
NTD18N06L
Power MOSFET
18 Amps, 60 Volts, Logic Level
N–Channel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–to–Source Voltage
VDSS
60
Vdc
Drain–to–Gate Voltage (RGS = 10 M)
VDGR
60
Vdc
Gate–to–Source Voltage
– Continuous
– Non–repetitive (tpv10 ms)
VGS
"15
"20
Vdc
Drain Current
– Continuous @ TA = 25°C
– Continuous @ TA = 100°C
– Single Pulse (tpv10 s)
ID
IDM
18
10
54
Adc
Apk
Total Power Dissipation @ TA = 25°C
Derate above 25
°C
Total Power Dissipation @ TA = 25°C (Note 1.)
PD
55
0.36
2.1
W
W/
°C
W
Operating and Storage Temperature Range
TJ, Tstg
–55 to
+175
°C
Single Pulse Drain–to–Source Avalanche
Energy – Starting TJ = 25°C
(VDD = 50 Vdc, VGS = 5.0 Vdc,
L = 1.0 mH, IL(pk) = 12 A, VDS = 60 Vdc)
EAS
72
mJ
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient
– Junction–to–Ambient (Note 1.)
R
θJC
R
θJA
R
θJA
2.73
100
71.4
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″ from case for 10 seconds
TL
260
°C
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
2. Repetitive rating; pulse width limited by maximum junction temperature.
2500/Tape & Reel
18 AMPERES
60 VOLTS
RDS(on) = 0.065
Device
Package
Shipping
ORDERING INFORMATION
NTD18N06L
DPAK
75 Units/Rail
DPAK
CASE 369A
STYLE 2
1 2
3
4
http://onsemi.com
N–Channel
D
S
G
NTD18N06L–1
DPAK
75 Units/Rail
MARKING
DIAGRAM
1
Gate
4
Drain
2
Drain
3
Source
NTD18N06L
= Device Code
Y
= Year
WW
= Work Week
NTD18N06LT4
DPAK
PIN ASSIGNMENT
YWW
NTD
18N06L
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTD20N03L27-1 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 20A I(D) | TO-252AA |
| NTD20N06-1 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 20A I(D) | TO-251AA |
| NTD24N06-1 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 24A I(D) | TO-252AA |
| NTE0503M-R | Analog IC |
| NTE0505MC-R | 1-OUTPUT 1 W DC-DC REG PWR SUPPLY MODULE |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD18N06T4G | 功能描述:MOSFET 60V 18A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD20 | 制造商:EDI 制造商全稱:Electronic devices inc. 功能描述:HIGH VOLTAGE-HIGH CURRENT SILICON RECTIFIERS |
| NTD20N03L27 | 功能描述:MOSFET 30V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD20N03L27/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 20 Amps， 30 Volts |
| NTD20N03L27-001 | 功能描述:MOSFET 30V 20A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。