- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363713 > NTB65N02R (ON SEMICONDUCTOR) Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK PDF資料下載
參數(shù)資料
| 型號： | NTB65N02R |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK |
| 中文描述： | 7.6 A, 25 V, 0.0105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 418AA-01, D2PAK-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 47K |
| 代理商： | NTB65N02R |
Semiconductor Components Industries, LLC, 2002
October, 2002 – Rev. 0
1
Publication Order Number:
NTB65N02R/D
NTB65N02R, NTP65N02R
Product Preview
Power MOSFET
65 A, 24 V N-Channel
TO-220, D
2
PAK
Features
Planar HD3e Process for Fast Switching Performance
Low R
DSon
to Minimize Conduction Loss
Low C
iss
to Minimize Driver Loss
Low Gate Charge
Fast Switching
MAXIMUM RATINGS
(T
J
= 25
°
C Unless otherwise specified)
Parameter
Symbol
Value
Unit
Drain–to–Source Voltage
V
DSS
24
V
dc
Gate–to–Source Voltage
Continuous
V
GS
±
20
V
dc
Drain Current(Continuous @ T
A
= 25
°
C (Note 3)
Single Pulse (tp = 10 s)
I
D
I
DM
65
160
A
A
Total Power Dissipation @ T
A
= 25
°
C
P
D
78
W
Operating and Storage Temperature
T
J
and
T
stg
–55 to
150
°
C
Single Pulse Drain–to Source Avalanche
Energy – Starting T
J
=25
°
C
(V
DD
= 50 V
dc
, V
GS
= 5 V
dc
, I
L
= A
pk
, L = 1 mH,
R
G
E
AS
TBD
mJ
Thermal Resistance
Junction–to–Case
Junction–to–Ambient (Note 1)
Junction–to–Ambient (Note 2)
R
JC
R
JA
R
JA
1.6
67
120
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8” from Case for 10 Seconds
T
L
260
°
C
1. When surface mounted to an FR4 board using 1 inch pad size, (Cu Area
1.127 in
2
).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in
2
).
3. Chip current capability limited by package.
PIN ASSIGNMENT
PIN
FUNCTION
1
Gate
2
Drain
3
Source
4
Drain
This document contains information on a product under development. ON Semiconductor
reserves the right to change or discontinue this product without notice.
http://onsemi.com
Device
Package
D
2
PAK
Shipping
ORDERING INFORMATION
NTP65N02R
TO–220AB
50 Units/Rail
NTB65N02R
TO–220AB
CASE 221A
Style 5
50 Units/Rail
65 A, 24 V
R
DS(on)
= 8.3 m (TYP)
MARKING
DIAGRAMS
xxxxx
Y
WW
= Specific Device Code
= Year
= Work Week
NTB65N02RT4
D
2
PAK
800 Tape & Reel
D
2
PAK
CASE 418B
Style 2
D
S
G
YWW
xxxxx
YWW
xxxxx
123
4
1
2
3
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NTB65N02RT4 | Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK |
| NTP65N02R | Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK |
| NTP75N03L09G | Dualmat Static Dissipative Work Surface Mat; Body Material:Industrial-grade Elastomer; External Width:60"; Thickness:2mm; Color:Royal Blue; External Height:30" RoHS Compliant: Yes |
| NTP85N03 | Power MOSFET 85 Amps, 28 Volts N-Channel TO-220(85A,28V,N通道,TO-220封裝的功率MOSFET) |
| NTB85N03 | Power MOSFET 85 Amps, 28 Volts |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTB65N02R_05 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK |
| NTB65N02RG | 功能描述:MOSFET 24V 65A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB65N02RT4 | 功能描述:MOSFET 24V 65A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB65N02RT4G | 功能描述:MOSFET 24V 65A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTB6N60 | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:ON Semiconductor 功能描述: |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。