參數(shù)資料
型號： NSI45030ZT1G
廠商： ON Semiconductor
文件頁數(shù)： 2/7頁
文件大?。?/td> 164K
描述： IC CCR/LED DVR 45V 30MA SOT223-4
標(biāo)準(zhǔn)包裝： 1,000
功能： *
檢測方法： *
精確度： *
輸入電壓： *
電流 - 輸出： *
工作溫度： *
安裝類型： 表面貼裝
封裝/外殼： TO-261-4，TO-261AA
供應(yīng)商設(shè)備封裝： SOT-223
包裝： 帶卷 (TR)
NSI45030ZT1G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
 = 25癈 unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Steady State Current @ Vak = 7.5 V (Note 1)
I
reg(SS)
25.5
30
34.5
mA
Voltage Overhead (Note 2)
V
overhead
1.8
V
Pulse Current @ Vak = 7.5 V (Note 3)
I
reg(P)
26.7
31.55
36.4
mA
Capacitance @ Vak = 7.5 V (Note 4)
C
2.6
pF
Capacitance @ Vak = 0 V (Note 4)
C
6.9
pF
1.  I
reg(SS)
 steady state is the voltage (Vak) applied for a time duration e 10 sec, using FR4 @ 300 mm
2
 2 oz. Copper traces, in still air.
2.  V
overhead
 = V
in
  V
LEDs
. V
overhead
 is typical value for 70% I
reg(SS)
.
3.  I
reg(P)
 nonrepetitive pulse test. Pulse width t d 300 msec.
4.  f = 1 MHz, 0.02 V RMS.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
Total Device Dissipation (Note 5) T
A
 = 25癈
 Derate above 25癈
P
D
954
7.6
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 5)
R
?SPAN class="pst NSI45030ZT1G_2471103_5">JA
131
癈/W
Thermal Reference, JunctiontoLead 4 (Note 5)
R
?SPAN class="pst NSI45030ZT1G_2471103_5">JL4
40.8
癈/W
Total Device Dissipation (Note 6) T
A
 = 25癈
 Derate above 25癈
P
D
1074
8.6
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 6)
R
?SPAN class="pst NSI45030ZT1G_2471103_5">JA
116
癈/W
Thermal Reference, JunctiontoLead 4 (Note 6)
R
?SPAN class="pst NSI45030ZT1G_2471103_5">JL4
39.9
癈/W
Total Device Dissipation (Note 7) T
A
 = 25癈
 Derate above 25癈
P
D
1150
9.2
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 7)
R
?SPAN class="pst NSI45030ZT1G_2471103_5">JA
109
癈/W
Thermal Reference, JunctiontoLead 4 (Note 7)
R
?SPAN class="pst NSI45030ZT1G_2471103_5">JL4
42
癈/W
Total Device Dissipation (Note 8) T
A
 = 25癈
 Derate above 25癈
P
D
1300
10.4
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 8)
R
?/DIV>
JA
96
癈/W
Thermal Reference, JunctiontoLead 4 (Note 8)
R
?/DIV>
JL4
39.4
癈/W
Total Device Dissipation (Note 9) T
A
 = 25癈
 Derate above 25癈
P
D
1214
9.7
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 9)
R
?SPAN class="pst NSI45030ZT1G_2471103_5">JA
103
癈/W
Thermal Reference, JunctiontoLead 4 (Note 9)
R
?SPAN class="pst NSI45030ZT1G_2471103_5">JL4
40.2
癈/W
Total Device Dissipation (Note 10) T
A
 = 25癈
 Derate above 25癈
P
D
1389
11.1
mW
mW/癈
Thermal Resistance, JunctiontoAmbient (Note 10)
R
?SPAN class="pst NSI45030ZT1G_2471103_5">JA
90
癈/W
Thermal Reference, JunctiontoLead 4 (Note 10)
R
?/DIV>
JL4
37.7
癈/W
Junction and Storage Temperature Range
T
J
, T
stg
55 to +150
癈
5.  FR4 @ 100 mm
2
, 1 oz. copper traces, still air.
6.  FR4 @ 100 mm
2
, 2 oz. copper traces, still air.
7.  FR4 @ 300 mm
2
, 1 oz. copper traces, still air.
8.  FR4 @ 300 mm
2
, 2 oz. copper traces, still air.
9.  FR4 @ 500 mm
2
, 1 oz. copper traces, still air.
10.FR4 @ 500 mm
2
, 2 oz. copper traces, still air.
NOTE: Lead measurements are made by noncontact methods such as IR with treated surface to increase emissivity to 0.9.
Lead temperature measurement by attaching a T/C may yield values as high as 30% higher 癈/W values based upon empirical
measurements and method of attachment.
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