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參數(shù)資料
| 型號： | NP88N055NHE |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | MOS場效應晶體管的開關N溝道功率場效應晶體管 |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 205K |
| 代理商： | NP88N055NHE |
Data Sheet D14148EJ8V0DS
4
NP88N055EHE, NP88N055KHE, NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE
TYPICAL CHARACTERISTICS (T
A
= 25
°
C)
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
T
C
- Case Temperature -
°
C
P
T
00
25
50
75
100
125
150
175
200
350
300
250
200
150
100
50
d
00
25
50
75
100
125
150
175
200
20
40
60
80
100
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
Starting T
ch
- Starting Channel Temperature -
°
C
0
25
100
400
600
800
50
75
100
125
150
175
500
300
200
700
T
C
- Case Temperature -
°
C
I
AS
= 65 A
88 A
422 mJ
15 mJ
PW - Pulse Width - s
Figure5.
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r
t
°
C
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1 000
10
100
μ
μ
Single Pulse
T
C
= 25
°
C
R
th(ch-A)
= 83.3
°
C/W
R
th(ch-C)
= 0.52
°
C/W
Figure3. FORWARD BIAS SAFE OPERATING AREA
V
DS
- Drain to Source Voltage - V
I
D
10
1
0.1
100
0.1
1000
1
10
100
I
D(pulse)
R
DS(on)
Lmted
(V
GS
=10V)
I
D(DC)
1ms
10ms
DC
LPowe Dsspaion
T
C
= 25
°
C
Single Pulse
100
μ
s
PW=10
μ
s
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| NP88N055NHE-S18-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NP88N055NHE-S18 | 制造商:Renesas Electronics Corporation 功能描述: |
| NP88N055NHE-S18-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N055NLE | 制造商:Renesas Electronics Corporation 功能描述: |
| NP88N055NLE-S18-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N075CUE | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 75V V(BR)DSS | 88A I(D) | TO-220AB |
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