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參數(shù)資料
| 型號： | NP88N055KHE-E2-AY |
| 廠商： | NEC Corp. |
| 元件分類： | MOSFETs |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | MOS場效應晶體管的開關N溝道功率場效應晶體管 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 205K |
| 代理商： | NP88N055KHE-E2-AY |
Data Sheet D14148EJ8V0DS
2
NP88N055EHE, NP88N055KHE, NP88N055CHE, NP88N055DHE, NP88N055MHE, NP88N055NHE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage (V
GS
= 0 V)
V
DSS
55
V
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25
°
C)
Note1
Drain Current (Pulse)
Note2
V
GSS
±
20
±
88
±
352
V
I
D(DC)
A
I
D(pulse)
A
Total Power Dissipation (T
A
= 25
°
C)
Total Power Dissipation (T
C
= 25
°
C)
P
T1
1.8
W
P
T2
288
W
Channel Temperature
T
ch
175
°
C
°
C
Storage Temperature
Single Avalanche Current
Note3
Single Avalanche Energy
Note3
T
stg
55 to
+
175
I
AS
65/88
A
E
AS
422/15
mJ
Notes 1.
Calculated constant current according to MAX. allowable channel temperature.
2.
PW
≤
10
μ
s, Duty Cycle
≤
1%
3.
Starting T
ch
= 25
°
C, V
DD
= 28 V, R
G
= 25
Ω
, V
GS
= 20
→
0 V (See
Figure 4.
)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
R
th(ch-C)
0.52
°
C/W
°
C/W
Channel to Ambient Thermal Resistance
R
th(ch-A)
83.3
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| NP88N055MHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N055MHE-S18-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N055NHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N055NHE-S18-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N055CLE-S12-AZ | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NP88N055KLE | 制造商:Renesas Electronics Corporation 功能描述: |
| NP88N055KLE-E1-AY | 制造商:Renesas Electronics Corporation 功能描述: |
| NP88N055KLE-E2-AY | 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP88N055KUG-E1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| NP88N055KUG-E1-AY | 功能描述:MOSFET N-CH 55V 88A TO-263 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
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