參數(shù)資料
型號(hào): NP88N055DLE-S12-AY
元件分類: JFETs
英文描述: 88 A, 55 V, 0.0068 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-262AA
封裝: LEAD FREE, MP-25, TO-262, 3 PIN
文件頁數(shù): 5/10頁
文件大?。?/td> 207K
代理商: NP88N055DLE-S12-AY
Data Sheet D13933EJ7V0DS
4
NP88N055ELE, NP88N055KLE, NP88N055CLE, NP88N055DLE, NP88N055MLE, NP88N055NLE
TYPICAL CHARACTERISTICS (TA = 25
°C)
Figure2. TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
TC - Case Temperature -
°C
P
T
-
Total
Power
Dissipation
-
W
0
25
50
75
100
125
150
175
200
350
300
250
200
150
100
50
Figure1. DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
dT
-
Percentage
of
Rated
Power
-
%
0
25
50
75
100
125
150
175
200
20
40
60
80
100
Figure4. SINGLE AVALANCHE ENERGY
DERATING FACTOR
TC - Case Temperature -
°C
Starting Tch - Starting Channel Temperature -
°C
Single
Pulse
Avalanche
Energy
-
mJ
0
25
100
400
600
800
50
75
100
125
150
175
500
300
200
700
IAS = 75 A
88 A
562 mJ
232 mJ
Figure3. FORWARD BIAS SAFE OPERATING AREA
VDS - Drain to Source Voltage - V
ID
-
Drain
Current
-
A
10
1
0.1
100
0.1
1000
1
10
100
ID(pulse)
R
DS(on)
Limited
(V
GS
= 10
V)
ID(DC)
PW
=
10
μs
1 ms
10
ms
DC
Po
wer
Dissipation
Limited
Single pulse
TC = 25
°C
100
μs
Figure5. TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
rth(t)
-
Transient
Thermal
Resistance
-
°C/
W
10
0.01
0.1
1
100
1000
1 m
10 m
100 m
1
10
100
1000
10
100
μμ
Single pulse
Rth(ch-A) = 83.3
°C/W
TC = 25
°C
Rth(ch-C) = 0.52
°C/W
PW - Pulse Width - s
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