參數(shù)資料
型號: NP86N04MHE-S18-AY
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
中文描述: MOS場效應(yīng)晶體管的開關(guān)N溝道功率場效應(yīng)晶體管
文件頁數(shù): 8/10頁
文件大小: 221K
代理商: NP86N04MHE-S18-AY
Data Sheet D14235EJ4V0DS
8
NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE
5)TO-220 (MP-25K)
6)TO-262 (MP-25SK)
4
2
±
10.0
±
0.2
3.8
±
0.2
φ
6
±
4.45
±
0.2
1.3
±
0.2
0.8
±
0.1
0.5
±
0.2
2.5
±
0.2
1.27
±
0.2
3
±
1
1
2
3
1
±
2.54 TYP.
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
4
1
2
3
10.0
±
0.2
4.45
±
0.2
1.3
±
0.2
1
±
0.8
±
0.1
1.27
±
0.2
0.5
±
0.2
2.5
±
0.2
2.54 TYP.
2.54 TYP.
1
±
8
±
1
±
3
±
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Source
Body
Diode
Gate
Protection
Diode
Gate
Remark
The diode connected between the gate and source of the transistor serves as a protector against ESD.
When this device actually used, an additional protection circuit is externally required if a voltage exceeding
the rated voltage may be applied to this device.
相關(guān)PDF資料
PDF描述
NP86N04NHE MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP86N04NHE-S18-AY MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP88N04MHE MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET
NP88N04MHE-S18-AY MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET
NP88N04NHE MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NP86N04NHE 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP86N04NHE-S18-AY 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP88N03KDG-E1-AY 功能描述:MOSFET N-CH 30V 88A TO-263 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件
NP88N03KUG-E1 制造商:Renesas Electronics Corporation 功能描述:
NP88N03KUG-E1-AY 功能描述:MOSFET N-CH 30V 88A TO-263 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時(shí)的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件