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參數(shù)資料
| 型號(hào)： | NP86N04CHE-S12-AZ |
| 廠商： | NEC Corp. |
| 元件分類(lèi)： | MOSFETs |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | MOS場(chǎng)效應(yīng)晶體管的開(kāi)關(guān)N溝道功率場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 3/10頁(yè) |
| 文件大?。?/td> | 221K |
| 代理商： | NP86N04CHE-S12-AZ |
Data Sheet D14235EJ4V0DS
3
NP86N04EHE, NP86N04KHE, NP86N04CHE, NP86N04DHE, NP86N04MHE, NP86N04NHE
ELECTRICAL CHARACTERISTICS (T
A
= 25
°
C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX. UNIT
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40 V, V
GS
= 0
V
10
μ
A
Gate Leakage Current
I
GSS
V
GS
=
±
20 V, V
DS
= 0
V
±
10
μ
A
Gate to Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250
μ
A
2.0
3.0
4.0
V
Forward Transfer Admittance
| y
fs
|
V
DS
= 10 V, I
D
= 43 A
29
57
S
Drain to Source On-state Resistance
R
DS(on)
V
GS
= 10 V, I
D
= 43 A
3.5
4.4
m
Ω
Input Capacitance
C
iss
V
DS
= 25 V,
5900
8900
pF
Output Capacitance
C
oss
V
GS
= 0
V,
1200
1800
pF
Reverse Transfer Capacitance
C
rss
f = 1 MHz
530
960
pF
Turn-on Delay Time
t
d(on)
V
DD
= 20
V, I
D
= 43 A,
32
71
ns
Rise Time
t
r
V
GS
= 10
V,
24
59
ns
Turn-off Delay Time
t
d(off)
R
G
= 1
Ω
110
220
ns
Fall Time
t
f
33
82
ns
Total Gate Charge
Q
G
V
DD
= 32
V,
110
170
nC
Gate to Source Charge
Q
GS
V
GS
= 10 V,
22
nC
Gate to Drain Charge
Q
GD
I
D
= 86
A
36
nC
Body Diode Forward Voltage
V
F(S-D)
I
F
= 86 A, V
GS
= 0
V
0.93
V
Reverse Recovery Time
t
rr
I
F
= 86 A, V
GS
= 0
V,
70
ns
Reverse Recovery Charge
Q
rr
di/dt = 100 A/
μ
s
125
nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
TEST CIRCUIT 3 GATE CHARGE
V
GS
= 20
→
0 V
PG.
R
G
= 25
Ω
50
Ω
D.U.T.
L
V
DD
PG.
D.U.T.
R
L
V
DD
TEST CIRCUIT 2 SWITCHING TIME
R
G
PG.
I
G
= 2 mA
50
Ω
D.U.T.
R
L
V
DD
I
D
V
DD
I
AS
V
DS
BV
DSS
Starting T
ch
V
GS
0
τ
= 1
μ
s
Duty Cycle
≤
1%
τ
GS
Wave Form
DS
Wave Form
V
GS
V
DS
10%
0
0
90%
90%
90%
V
GS
V
DS
t
on
t
off
t
d(on)
t
r
t
d(off)
t
f
10%
10%
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NP86N04DHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP86N04DHE-S12-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP86N04EHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP86N04EHE-E1-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP86N04EHE-E2-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NP86N04DHE | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP86N04DHE-S12-AY | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP86N04EHE | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP86N04EHE-E1-AY | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP86N04EHE-E2-AY | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
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