參數(shù)資料
型號: NP84N075NUE-S18-AY
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
中文描述: MOS場效應(yīng)晶體管的開關(guān)N溝道功率場效應(yīng)晶體管
文件頁數(shù): 9/10頁
文件大?。?/td> 217K
代理商: NP84N075NUE-S18-AY
Data Sheet D14675EJ4V0DS
8
NP84N075EUE, NP84N075KUE, NP84N075CUE, NP84N075DUE, NP84N075MUE, NP84N075NUE
5)TO-220 (MP-25K)
6)TO-262 (MP-25SK)
4
2.8
±
0.3
10.0
± 0.2
3.8
± 0.2
φ
6.3
±
0.3
4.45
± 0.2
1.3
± 0.2
0.8
± 0.1
0.5
± 0.2
2.5
± 0.2
1.27
± 0.2
3.1
±
0.2
15.9
MAX.
12 3
13.7
±
0.3
2.54 TYP.
1.Gate
2.Drain
3.Source
4.Fin (Drain)
4
12 3
10.0
± 0.2
4.45
± 0.2
1.3
± 0.2
13.7
±
0.3
0.8
± 0.1
1.27
± 0.2
0.5
± 0.2
2.5
± 0.2
2.54 TYP.
1.2
±
0.3
8.9
±
0.2
10.1
±
0.3
3.1
±
0.3
1.Gate
2.Drain
3.Source
4.Fin (Drain)
EQUIVALENT CIRCUIT
Source
Body
Diode
Gate
Drain
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
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