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參數(shù)資料
| 型號(hào)： | NP84N075DUE-S12-AY |
| 廠商： | NEC Corp. |
| 元件分類(lèi)： | MOSFETs |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| 中文描述： | MOS場(chǎng)效應(yīng)晶體管的開(kāi)關(guān)N溝道功率場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 217K |
| 代理商： | NP84N075DUE-S12-AY |
Data Sheet D14675EJ4V0DS
2
NP84N075EUE, NP84N075KUE, NP84N075CUE, NP84N075DUE, NP84N075MUE, NP84N075NUE
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Drain to Source Voltage
(V
GS
=
0 V)
V
DSS
75
V
Gate to Source Voltage
(V
DS
= 0 V)
Drain Current (DC)
(T
C
=
25
°
C)
Note1
Drain Current
(pulse)
Note2
V
GSS
±
20
±
84
±
260
V
I
D(DC)
A
I
D(pulse)
A
Total Power Dissipation
(T
A
=
25
°
C)
Total Power Dissipation
(T
C
= 25
°
C)
P
T1
1.8
W
P
T2
200
W
Channel Temperature
T
ch
175
°
C
°
C
Storage Temperature
Single Avalanche Current
Note3
Single Avalanche Energy
Note3
T
stg
55 to
+
175
I
AS
19/52/73
A
E
AS
333/250/50
mJ
Notes 1.
Calculated constant current according to MAX. allowable channel temperature.
2.
PW
≤
10
μ
s, Duty cycle
≤
1%
3.
Starting T
ch
= 25
°
C, V
DD
= 35 V, R
G
= 25
Ω
, V
GS
= 20
→
0 V (See
Figure 4.
)
THERMAL RESISTANCE
Channel to Case Thermal Resistance
R
th(ch-C)
0.75
°
C/W
°
C/W
Channel to Ambient Thermal Resistance
R
th(ch-A)
83.3
相關(guān)PDF資料 |
PDF描述 |
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| NP86N04CHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP86N04CHE-S12-AZ | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP86N04DHE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP86N04DHE-S12-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NP84N075EUE | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP84N075EUE-E1-AY | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP84N075EUE-E2-AY | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP84N075KUE | 制造商:Renesas Electronics Corporation 功能描述: |
| NP84N075KUE-E1-AY | 功能描述:MOSFET N-CH 75V 84A TO-263 RoHS:是 類(lèi)別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門(mén) 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開(kāi)態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類(lèi)型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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