參數(shù)資料
型號: NP84N055MLE
廠商: NEC Corp.
元件分類: MOSFETs
英文描述: MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
中文描述: MOS場效應(yīng)晶體管的開關(guān)N溝道功率場效應(yīng)晶體管
文件頁數(shù): 5/10頁
文件大小: 221K
代理商: NP84N055MLE
Data Sheet D14100EJ7V0DS
5
NP84N055ELE, NP84N055KLE, NP84N055CLE, NP84N055DLE, NP84N055MLE, NP84N055NLE
Figure6. FORWARD TRANSFER CHARACTERISTICS
V
GS
- Gate to Source Voltage - V
I
D
10
1
0.1
100
1000
Pulsed
1.0
2.0
3.0
4.0
6.0
5.0
T
A
=
40
°
C
25
°
C
75
°
C
150
°
C
175
°
C
Figure7. DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
V
DS
- Drain to Source Voltage - V
I
D
4
400
320
240
160
80
0
2
Pulsed
V
GS
= 10 V
0
3
1
5.0 V
4.5 V
Figure8. FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
100
Pulsed
I
D
- Drain Current - A
f
0.01
0.1
1
10
10
100
0.1
0.01
1
75
°
C
25
°
C
40
°
C
V
= 10 V
T
A
= 175
°
C
Figure9. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
20
V
GS
- Gate to Source Voltage - V
R
D
Ω
0
5
10
10
15
20
Pulsed
I
D
= 42 A
0
Figure10. DRAIN TO SOURCE ON-STATE
RESISTANCE vs. DRAIN CURRENT
I
D
- Drain Current - A
R
D
Ω
5
10
1
10
15
100
1000
Pulsed
0
5 V
10 V
V
= 4.5 V
Figure11. GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
3.0
T
ch
- Channel Temperature -
°
C
V
G
0.5
V
DS
= V
GS
I
D
= 250
μ
A
1.0
1.5
2.0
2.5
50
0
50
100
150
0
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NP84N055MLE-S18-AY 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP84N055NHE 制造商:Renesas Electronics Corporation 功能描述:
NP84N055NHE-S18-AY 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP84N055NLE 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET
NP84N055NLE-S18-AY 制造商:NEC 制造商全稱:NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET