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參數(shù)資料
| 型號(hào)： | NP82N055DHE |
| 廠(chǎng)商： | NEC Corp. |
| 英文描述： | MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING |
| 中文描述： | MOS場(chǎng)效應(yīng)晶體管的開(kāi)關(guān)開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 77K |
| 代理商： | NP82N055DHE |
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MOS FIELD EFFECT TRANSISTOR
NP82N055CHE,NP82N055DHE,NP82N055EHE,NP82N055KHE
SWITCHING
N-CHANNEL POWER MOS FET
DATA SHEET
Document No. D14138EJ5V0DS00 (5th edition)
Date Published December 2002 NS CP(K)
Printed in Japan
The mark
#
shows major revised points.
1999
DESCRIPTION
These products are N-channel MOS Field Effect Transistor
designed for high current switching applications.
FEATURES
Channel temperature 175 degree rated
Super low on-state resistance
R
DS(on)
= 8.6 m
MAX. (V
GS
= 10 V, I
D
= 41 A)
Low C
iss
: C
iss
= 3500 pF TYP.
Built-in gate protection diode
ABSOLUTE MAXIMUM RATINGS (T
A
= 25°C)
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC)
Note1
Drain Current (pulse)
Note2
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T
P
T
T
ch
T
stg
I
AS
E
AS
55
±
20
±
82
±
300
1.8
163
175
V
V
A
A
W
W
°C
°C
A
mJ
Total Power Dissipation (T
A
= 25°C)
Total Power Dissipation (T
C
= 25°C)
Channel Temperature
Storage Temperature
Single Avalanche Current
Note3
Single Avalanche Energy
Note3
Notes 1.
Calculated constant current according to MAX. allowable channel
temperature.
2.
PW
≤
10
μ
s, Duty cycle
≤
1%
3.
Starting T
ch
= 25°C, V
DD
= 28 V, R
G
= 25
, V
GS
= 20
→
0 V (See Figure 4.)
–55 to +175
72 / 49 / 17
51 / 240 / 289
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Channel to Ambient Thermal Resistance
R
th(ch-C)
R
th(ch-A)
0.92
83.3
°C/W
°C/W
ORDERING INFORMATION
PART NUMBER
PACKAGE
NP82N055CHE
TO-220AB
NP82N055DHE
TO-262
NP82N055EHE
TO-263 (MP-25ZJ)
NP82N055KHE
TO-263 (MP-25ZK)
(TO-220AB)
(TO-262)
(TO-263)
#
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NP82N055EHE | MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING |
| NP82N055KHE | MOS FIELD EFFECT TRANSISTOR SWITCHING SWITCHING |
| NP82N055MLE | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP82N055CLE-S12-AZ | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP82N055DLE-S12-AY | MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NP82N055DHE-S12-AY | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP82N055DLE | 制造商:未知廠(chǎng)家 制造商全稱(chēng):未知廠(chǎng)家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 55V V(BR)DSS | 82A I(D) | TO-262AA |
| NP82N055DLE-S12-AY | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP82N055EHE | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
| NP82N055EHE-E1-AY | 制造商:NEC 制造商全稱(chēng):NEC 功能描述:MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET |
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