參數(shù)資料
型號: NP2600
廠商: ON SEMICONDUCTOR
英文描述: Thyristor Surge Protectors(可控硅浪涌保護器)
中文描述: 晶閘管浪涌保護器(可控硅浪涌保護器)
文件頁數(shù): 1/5頁
文件大小: 75K
代理商: NP2600
Semiconductor Components Industries, LLC, 2007
August, 2007 - Rev. 4
1
Publication Order Number:
NP0640S/D
NP Series
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional
NP Series Thyristor Surge Protector Devices (TSPD) protect
telecommunication circuits such as central office, access, and
customer premises equipment from overvoltage conditions. These are
bidirectional devices so they are able to have functionality of 2 devices
in one package, saving valuable space on board layout.
These devices will act as a crowbar when overvoltage occurs and will
divert the energy away from circuit or device that is being protected.
Use of the NP Series in equipment will help meet various regulatory
requirements including: GR-1089-CORE, IEC 61000-4-5, ITU
K.20/21/45, IEC 60950, TIA-968-A, FCC Part 68, EN 60950,
UL 1950.
ELECTRICAL PARAMETERS
Device
V
DRM
V
(BO)
V
T
I
DRM
I
(BO)
I
T
I
H
V
V
V
A
mA
A
mA
NP0640SxT3G
58
77
4
5
800
2.2
150
NP0720SxT3G
65
88
4
5
800
2.2
150
NP0900SxT3G
75
98
4
5
800
2.2
150
NP1100SxT3G
90
130
4
5
800
2.2
150
NP1300SxT3G
120
160
4
5
800
2.2
150
NP1500SxT3G
140
180
4
5
800
2.2
150
NP1800SxT3G
170
220
4
5
800
2.2
150
NP2100SxT3G
180
240
4
5
800
2.2
150
NP2300SxT3G
190
260
4
5
800
2.2
150
NP2600SxT3G
220
300
4
5
800
2.2
150
NP3100SxT3G
275
350
4
5
800
2.2
150
NP3500SxT3G
320
400
4
5
800
2.2
150
G = indicates leadfree, RoHS compliant
SURGE DATA RATINGS
Specification
Waveform
x = series ratings
Unit
Voltage
s
Current
s
A
B
C
GR-1089-CORE
2x10
2x10
150
250
500
A(pk)
TIA-968-A
10x160
10x160
90
150
200
GR-1089-CORE
10x360
10x360
75
125
175
TIA-968-A
10x560
10x560
50
100
150
ITU-T K.20/21
10x700
5x310
75
100
200
GR-1089-CORE
10x1000
10x1000
50
80
100
*
Recognized Components
BIDIRECTIONAL SURFACE
MOUNT THYRISTOR
64 - 350 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
MT1
MT2
SMB
JEDEC DO-214AA
CASE 403C
xxxx
Y
WW
= Specific Device Code
= Year
= Work Week
= Pb-Free Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
AYWW
xxxx
http://onsemi.com
See detailed ordering and shipping information on page 4 of
this data sheet.
ORDERING INFORMATION
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NP2600SA1 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:BIDIRECTIONAL TSPD 50, 80, AND 100 AMP SURGE 260 VOLTS HIGH HOLD CURRENT 270 mA MIN
NP2600SA1T3G 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:BIDIRECTIONAL TSPD 50, 80, AND 100 AMP SURGE 260 VOLTS HIGH HOLD CURRENT 270 mA MIN
NP2600SAMCT3G 功能描述:硅對稱二端開關(guān)元件 LC-TSPD 260V 50A RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
NP2600SAT3G 功能描述:硅對稱二端開關(guān)元件 THY SMB 50A 260V SURGE RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA
NP2600SB1T3G 功能描述:硅對稱二端開關(guān)元件 260V 80A TSPD IH 250mA RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下): 保持電流(Ih 最大值):50 mA 開啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:DO-214AA