- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄363377 > NP0640SBT3G (ON SEMICONDUCTOR) Thyristor Surge Protectors High Voltage Bidirectional PDF資料下載
參數(shù)資料
| 型號(hào)： | NP0640SBT3G |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 浪涌電流限制器 |
| 英文描述： | Thyristor Surge Protectors High Voltage Bidirectional |
| 中文描述： | 77 V, SILICON SURGE PROTECTOR, DO-214AA |
| 封裝： | ROHS COMPLIANT, CASE 403C-01, SMB, 2 PIN |
| 文件頁(yè)數(shù)： | 1/5頁(yè) |
| 文件大小： | 59K |
| 代理商： | NP0640SBT3G |
Semiconductor Components Industries, LLC, 2006
November, 2006 Rev. 0
1
Publication Order Number:
NP0640S/D
NP Series
Preferred Devices
Thyristor Surge Protectors
High Voltage Bidirectional
NP Series Thyristor Surge Protector Devices (TSPD) protect
telecommunication circuits such as central office, access, and
customer premises equipment from overvoltage conditions. These are
bidirectional devices so they are able to have functionality of 2 devices
in one package, saving valuable space on board layout.
These devices will act as a crowbar when overvoltage occurs and will
divert the energy away from circuit or device that is being protected.
Use of the NP Series in equipment will help meet various regulatory
requirements including: GR1089CORE, IEC 6100045, ITU
K.20/21/45, IEC 60950, TIA968A, FCC Part 68, EN 60950,
UL 1950.
ELECTRICAL PARAMETERS
Device
V
DRM
V
(BO)
V
T
I
DRM
I
(BO)
I
T
I
H
V
V
V
A
mA
A
mA
NP0640SxT3G
58
77
4
5
800
2.2
150
NP0720SxT3G
65
88
4
5
800
2.2
150
NP0900SxT3G
75
98
4
5
800
2.2
150
NP1100SxT3G
90
130
4
5
800
2.2
150
NP1300SxT3G
120
160
4
5
800
2.2
150
NP1500SxT3G
140
180
4
5
800
2.2
150
NP1800SxT3G
170
220
4
5
800
2.2
150
NP2100SxT3G
180
240
4
5
800
2.2
150
NP2300SxT3G
190
260
4
5
800
2.2
150
NP2600SxT3G
220
300
4
5
800
2.2
150
NP3100SxT3G
275
350
4
5
800
2.2
150
NP3500SxT3G
320
400
4
5
800
2.2
150
G = indicates leadfree, RoHS compliant
SURGE DATA RATINGS
Specification
Waveform
x = series ratings
Unit
Voltage
s
Current
s
A
B
C
GR1089CORE
2x10
2x10
150
250
500
A(pk)
IEC 6100045
1.2x50
8x20
150
250
400
TIA968A
10x160
10x160
90
150
200
GR1089CORE
10x360
10x360
75
125
175
TIA968A
10x560
10x560
50
100
150
ITUT K.20/21
10x700
5x310
75
100
200
GR1089CORE
10x1000
10x1000
50
80
100
*
Recognized Components
BIDIRECTIONAL SURFACE
MOUNT THYRISTOR
64 350 VOLTS
Preferred
devices are recommended choices for future use
and best overall value.
MT1
MT2
SMB
JEDEC DO214AA
CASE 403C
xxxx
Y
WW
= Specific Device Code
= Year
= Work Week
= PbFree Package
(Note: Microdot may be in either location)
MARKING DIAGRAM
AYWW
xxxx
http://onsemi.com
See detailed ordering and shipping information on page 4 of
this data sheet.
ORDERING INFORMATION
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NP0640SCT3G | Thyristor Surge Protectors High Voltage Bidirectional |
| NP0640SXT3G | Thyristor Surge Protectors High Voltage Bidirectional |
| NP0720SAT3G | Thyristor Surge Protectors High Voltage Bidirectional |
| NP0720SBT3G | Thyristor Surge Protectors High Voltage Bidirectional |
| NP0720SCT3G | Thyristor Surge Protectors High Voltage Bidirectional |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NP0640SCMCT3G | 功能描述:硅對(duì)稱二端開(kāi)關(guān)元件 TSPD NP 64V LOW CAP RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| NP0640SCT3G | 功能描述:硅對(duì)稱二端開(kāi)關(guān)元件 100A 64V TSPD SMB RoHS:否 制造商:Bourns 轉(zhuǎn)折電流 VBO:40 V 最大轉(zhuǎn)折電流 IBO:800 mA 不重復(fù)通態(tài)電流: 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:25 V 關(guān)閉狀態(tài)漏泄電流（在 VDRM IDRM 下）: 保持電流（Ih 最大值）:50 mA 開(kāi)啟狀態(tài)電壓:5 V 關(guān)閉狀態(tài)電容 CO:120 pF 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DO-214AA |
| NP0640SXT3G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Thyristor Surge Protectors High Voltage Bidirectional |
| NP06DB100M | 功能描述:INDUCTOR WOUND 10UH 1.7A SMD RoHS:是 類別:電感器，線圈，扼流圈 >> 固定式 系列:- 標(biāo)準(zhǔn)包裝:500 系列:1331 電感:1.2µH 電流:247mA 電流 - 飽和:247mA 電流 - 溫升:- 類型:鐵芯體 容差:±10% 屏蔽:屏蔽 DC 電阻(DCR):最大 730 毫歐 Q因子@頻率:40 @ 7.9MHz 頻率 - 自諧振:130MHz 材料 - 芯體:鐵 封裝/外殼:0.312" L x 0.115" W x 0.135" H（7.94mm x 2.92mm x 3.43mm） 安裝類型:表面貼裝 包裝:帶卷 (TR) 工作溫度:-55°C ~ 105°C 頻率 - 測(cè)試:7.9MHz |
| NP06DB101M | 功能描述:INDUCTOR WOUND 100UH .60A SMD RoHS:是 類別:電感器，線圈，扼流圈 >> 固定式 系列:- 標(biāo)準(zhǔn)包裝:500 系列:1331 電感:1.2µH 電流:247mA 電流 - 飽和:247mA 電流 - 溫升:- 類型:鐵芯體 容差:±10% 屏蔽:屏蔽 DC 電阻(DCR):最大 730 毫歐 Q因子@頻率:40 @ 7.9MHz 頻率 - 自諧振:130MHz 材料 - 芯體:鐵 封裝/外殼:0.312" L x 0.115" W x 0.135" H（7.94mm x 2.92mm x 3.43mm） 安裝類型:表面貼裝 包裝:帶卷 (TR) 工作溫度:-55°C ~ 105°C 頻率 - 測(cè)試:7.9MHz |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。