參數(shù)資料
型號: NNCD6.8H-A
元件分類: TVS二極管 - 瞬態(tài)電壓抑制
英文描述: 85 W, UNIDIRECTIONAL, 4 ELEMENT, SILICON, TVS DIODE
封裝: PLASTIC, SC-88A, SUPERMINI-5
文件頁數(shù): 1/5頁
文件大小: 40K
代理商: NNCD6.8H-A
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
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sales representative for availability and additional information.
NNCD5.6H, NNCD6.8H
DATA SHEET
Document No. D15419EJ1V0DS00 (1st edition)
Date Published April 2003 NS CP(K)
Printed in Japan
ESD NOISE CLIPPING DIODE
2002
LOW CAPACITANCE TYPE ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE
(QUAD TYPE: COMMON ANODE)
5-PIN SUPER SMALL MINI MOLD
PACKAGE DRAWING (Unit: mm)
2.1
± 0.1
1.25
0.2
+0.1 0
15
2
34
0.65
1.9
2.0
±0.2
0.9
±0.1
0.7
0
to
0.1
0.16
+0.1 0.05
ELECTRODE CONNECTION
54
13
2
1. K1:
2. A:
3. K2:
4. K3:
5. K4:
Cathode1
Anode (common)
Cathode2
Cathode3
Cathode4
DESCRIPTION
This product series is a low capacitance type diode developed for ESD
(Electrostatic Discharge) absorption. Based on the IEC-61000-4-2 test on
electromagnetic interference (EMI), the diode assures an endurance of no
less then 30 kV, thus making itself most suitable for external interface
circuit protection.
With four elements mounted in the 5-pin super mini mold package, that
product can cope with more high density assembling.
FEATURES
Base on the electrostatic discharge immunity test (IEC 61000-4-2)
product assures the minimum endurance of 30 kV.
With 4 elements mounted (common anode).
Mounted in the SC-88A package, the product cans achiever high
density and automatic packaging.
APPLICATIONS
External interface circuit ESD absorption
Circuits for Waveform clipper, Surge absorber
MAXIMUM RATINGS (TA = 25°C)
ITEM
SYMBOL
RATING
UNIT
REMARK
Power Dissipation
P
200
mW
Total
Surge Reverse Power
PRSM
85 (t = 10
s, 1 pulse)
W
Junction Temperature
Tj
150
oC
Storage Temperature
Tstg
55 to +150
oC
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