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參數(shù)資料
| 型號： | NNCD11B-AZ |
| 元件分類： | TVS二極管 - 瞬態(tài)電壓抑制 |
| 英文描述： | 100 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-35 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 43K |
| 代理商： | NNCD11B-AZ |
1996
DATA SHEET
E.S.D NOISE CLIPPING DIODES
NNCD3.3B to NNCD12B
ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES
(500 mW TYPE)
This product series is a diode developed for E.S.D (Electrostatic
Discharge) noise protection. Based on the IEC1000-4-2 test on
electromagnetic interference (EMI), the diode assures an endur-
ance of no less than 30 kV.
Type NNCD2.0B to NNCD12B Series is into DO-35 Package with
DHD (Double Heatsink Diode) construction having allowable
power dissipation of 500 mW.
FEATURES
Based on the electrostatic discharge immunity test (IEC1000-4-
2), the product assures the minimum endurance of 30 kV.
Based on the reference supply of the set, the product achieves
a series over a wide range (15 product name lined up).
DHD (Double Heatsink Diode) construction.
APPLICATIONS
Circuit E.S.D protection.
Circuits for Waveform clipper, Surge absorber.
Document No. D11770EJ2V0DS00 (2nd edition)
Date Published December 1996 N
Printed in Japan
PACKAGE DIMENSIONS
(in millimeters)
MAXIMUM RATINGS (TA = 25
°C)
Power Dissipation
P
500 mW
Surge Reverse Power
PRSM
100 W (tT = 10
s 1 pulse) Fig. 7
Junction Temperature
Tj
175
°C
Storage Temperature
Tstg
–65
°C to +175 °C
0.5
φ
φ 2.0 MAX.
25
MIN.
25
MIN.
4.2
MAX.
Cathode
indication
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NNCD11C | 制造商:NEC 制造商全稱:NEC 功能描述:ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 150 mW TYPE |
| NNCD11C-T1-A | 制造商:Renesas Electronics Corporation 功能描述: |
| NNCD11D | 制造商:NEC 制造商全稱:NEC 功能描述:ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODES 200 mW TYPE |
| NNCD11D(T1-A) | 制造商:Renesas Electronics Corporation 功能描述: |
| NNCD11DA | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:ELECTROSTATIC DISCHARGE NOISE CLIPPING DIODE 2-PIN SUPER MINI MOLD |
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