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參數(shù)資料
| 型號(hào)： | NM93C66MM |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | PROM |
| 英文描述： | Electrically Erasable Programmable Memories |
| 中文描述： | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDSO14 |
| 封裝： | SO-14 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大小： | 204K |
| 代理商： | NM93C66MM |
TL/D/11778
N
a
September 1996
NM93C06LZ/C46LZ/C56LZ/C66LZ
256-/1024-/2048-/4096-Bit Serial EEPROM with Zero
Power and Extended Voltage (2.7V to 5.5V)
(MICROWIRE
TM
Bus Interface)
General Description
The NM93C06LZ/C46LZ/C56LZ/C66LZ devices are 256/
1024/2048/4096 bits respectively, of CMOS non-volatile
electrically erasable memory divided into 16/64/128/256
16-bit registers. They are fabricated using National Semi-
conductor’s floating-gate CMOS process for high reliability
and low power consumption. These memory devices are
available in both SO and TSSOP packages for small space
considerations.
The serial interface that operates these EEPROMs is MI-
CROWIRE compatible for simple interface to standard mi-
crocontrollers and microprocessors. There are 7 instruc-
tions that control these devices: Read, Erase/Write Enable,
Erase, Erase All, Write, Write All, and Erase/Write Disable.
The ready/busy status is available on the DO pin to indicate
the completion of a programming cycle.
Features
Y
Less than 1.0
m
A standby current
Y
2.7V–5.5V operation in all modes
Y
Typical active current of 100
m
A
Y
Direct write: no erase before program
Y
Reliable CMOS floating gate technology
Y
MICROWIRE compatible serial I/O
Y
Self-timed programming cycle
Y
Device status indication during programming mode
Y
40 years data retention
Y
Endurance: 10
6
data changes
Y
Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP
Block Diagram
TL/D/11778–1
TRI-STATE
é
is a registered trademark of National Semiconductor Corporation.
MICROWIRE
TM
is a trademark of National Semiconductor Corporation.
C
1996 National Semiconductor Corporation
RRD-B30M96/Printed in U. S. A.
http://www.national.com
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| NM93C66MN | Electrically Erasable Programmable Memories |
| NM93C66N | Electrically Erasable Programmable Memories |
| NM93C66TLVN | 256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) (MICROWIRE Bus Interface) |
| NM93C46LZM8 | 256-/1024-/2048-/4096-Bit Serial EEPROM with Zero Power and Extended Voltage (2.7V to 5.5V) |
| NM93C56LZM8 | 256-/1024-/2048-/4096-Bit Serial EEPROM with Zero Power and Extended Voltage (2.7V to 5.5V) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NM93C66MM8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Microwire Serial EEPROM |
| NM93C66MN | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:Electrically Erasable Programmable Memories |
| NM93C66MT8 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Microwire Serial EEPROM |
| NM93C66MT8X | 制造商:Rochester Electronics LLC 功能描述:- Bulk 制造商:Fairchild Semiconductor Corporation 功能描述: |
| NM93C66N | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:Electrically Erasable Programmable Memories |
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