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參數(shù)資料
| 型號： | NM93C66LEN |
| 廠商： | NATIONAL SEMICONDUCTOR CORP |
| 元件分類： | PROM |
| 英文描述： | 256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) (MICROWIRE Bus Interface) |
| 中文描述： | 256 X 16 MICROWIRE BUS SERIAL EEPROM, PDIP8 |
| 封裝： | 0.300 INCH, PLASTIC, DIP-8 |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 204K |
| 代理商： | NM93C66LEN |
TL/D/11778
N
a
September 1996
NM93C06LZ/C46LZ/C56LZ/C66LZ
256-/1024-/2048-/4096-Bit Serial EEPROM with Zero
Power and Extended Voltage (2.7V to 5.5V)
(MICROWIRE
TM
Bus Interface)
General Description
The NM93C06LZ/C46LZ/C56LZ/C66LZ devices are 256/
1024/2048/4096 bits respectively, of CMOS non-volatile
electrically erasable memory divided into 16/64/128/256
16-bit registers. They are fabricated using National Semi-
conductor’s floating-gate CMOS process for high reliability
and low power consumption. These memory devices are
available in both SO and TSSOP packages for small space
considerations.
The serial interface that operates these EEPROMs is MI-
CROWIRE compatible for simple interface to standard mi-
crocontrollers and microprocessors. There are 7 instruc-
tions that control these devices: Read, Erase/Write Enable,
Erase, Erase All, Write, Write All, and Erase/Write Disable.
The ready/busy status is available on the DO pin to indicate
the completion of a programming cycle.
Features
Y
Less than 1.0
m
A standby current
Y
2.7V–5.5V operation in all modes
Y
Typical active current of 100
m
A
Y
Direct write: no erase before program
Y
Reliable CMOS floating gate technology
Y
MICROWIRE compatible serial I/O
Y
Self-timed programming cycle
Y
Device status indication during programming mode
Y
40 years data retention
Y
Endurance: 10
6
data changes
Y
Packages available: 8-pin SO, 8-pin DIP, 8-pin TSSOP
Block Diagram
TL/D/11778–1
TRI-STATE
é
is a registered trademark of National Semiconductor Corporation.
MICROWIRE
TM
is a trademark of National Semiconductor Corporation.
C
1996 National Semiconductor Corporation
RRD-B30M96/Printed in U. S. A.
http://www.national.com
相關(guān)PDF資料 |
PDF描述 |
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| NM93C66LM8 | 256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) (MICROWIRE Bus Interface) |
| NM93C66LMT8 | 256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) (MICROWIRE Bus Interface) |
| NM93C66LN | 256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) (MICROWIRE Bus Interface) |
| NM93C66LVM8 | 256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) (MICROWIRE Bus Interface) |
| NM93C66LVMT8 | 256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) (MICROWIRE Bus Interface) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NM93C66LM8 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) (MICROWIRE Bus Interface) |
| NM93C66LMT8 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) (MICROWIRE Bus Interface) |
| NM93C66LN | 功能描述:IC EEPROM 4KBIT 1MHZ 8DIP RoHS:否 類別:集成電路 (IC) >> 存儲器 系列:- 標(biāo)準(zhǔn)包裝:150 系列:- 格式 - 存儲器:EEPROMs - 串行 存儲器類型:EEPROM 存儲容量:4K (2 x 256 x 8) 速度:400kHz 接口:I²C，2 線串口 電源電壓:2.5 V ~ 5.5 V 工作溫度:-40°C ~ 85°C 封裝/外殼:8-VFDFN 裸露焊盤 供應(yīng)商設(shè)備封裝:8-DFN（2x3） 包裝:管件 產(chǎn)品目錄頁面:1445 (CN2011-ZH PDF) |
| NM93C66LVM8 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) (MICROWIRE Bus Interface) |
| NM93C66LVMT8 | 制造商:NSC 制造商全稱:National Semiconductor 功能描述:256-/1024-/2048-/4096-Bit Serial EEPROM with Extended Voltage (2.7V to 5.5V) (MICROWIRE Bus Interface) |
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