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參數(shù)資料
| 型號： | NLU1GT125MUTCG |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 4/10頁 |
| 文件大小： | 0K |
| 描述： | IC BUFF TRI-ST TTL N-INV 6UDFN |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 邏輯類型： | 緩沖器/線路驅(qū)動器，非反相 |
| 元件數(shù)： | 1 |
| 每個元件的位元數(shù)： | 1 |
| 輸出電流高，低： | 8mA，8mA |
| 電源電壓： | 1.65 V ~ 5.5 V |
| 工作溫度： | -55°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 6-UFDFN |
| 供應(yīng)商設(shè)備封裝： | 6-UDFN（1.2x1） |
| 包裝： | 標(biāo)準(zhǔn)包裝 |
| 產(chǎn)品目錄頁面： | 1126 (CN2011-ZH PDF) |
| 其它名稱： | NLU1GT125MUTCGOSDKR |
NLU1GT125
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS
Symbol
Parameter
Conditions
VCC (V)
TA = 25 5C
TA = +855C
TA = 555C
to +1255C
Unit
Min
Typ
Max
Min
Max
Min
Max
VIH
LowLevel Input
Voltage
3.0
4.5 to 5.5
1.4
2.0
1.4
2.0
1.4
2.0
V
VIL
LowLevel Input
Voltage
3.0
4.5 to 5.5
0.53
0.8
0.53
0.8
0.53
0.8
V
VOH
HighLevel Output
Voltage
VIN = VIH or VIL
IOH = 50 mA
3.0
4.5
2.9
4.4
3.0
4.5
2.9
4.4
2.9
4.4
V
VIN = VIH or VIL
IOH = 4 mA
IOH = 8 mA
3.0
4.5
2.58
3.94
2.48
3.80
2.34
3.66
VOL
LowLevel Output
Voltage
VIN = VIH or VIL
IOL = 50 mA
3.0
4.5
0
0.1
V
VIN = VIH or VIL
IOL = 4 mA
IOL = 8 mA
3.0
4.5
0.36
0.44
0.52
IIN
Input Leakage
Current
0 v VIN v 5.5 V
0 to 5.5
±0.1
±1.0
mA
ICC
Quiescent Supply
Current
0 v VIN v VCC
5.5
1.0
20
40
mA
ICCT
Quiescent Supply
Current
VIN = 3.4 V
Other Input: VCC
or GND
5.5
1.35
1.50
1.65
mA
IOPD
Output Leakage
Current
VOUT = 5.5 V
0.0
0.5
5.0
10
mA
IOZ
3State Leakage
Current
VIN = VIH or VIL
VOUT = VCC or
GND
0.0
±0.25
±2.5
mA
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Symbol
Parameter
VCC
(V)
Test
Condition
TA = 25 5C
TA = +855C
TA = 555C
to +1255C
Unit
Min
Typ
Max
Min
Max
Min
Max
tPLH,
tPHL
Propagation Delay, A to Y
3.0 to 3.6
CL = 15 pF
CL = 50 pF
5.6
8.1
8.0
11.5
1.0
9.5
13.0
12.0
16.0
ns
4.5 to 5.5
CL = 15 pF
CL = 50 pF
3.8
5.3
5.5
7.5
1.0
6.5
8.5
10.5
tPZL,
tPZH
Output Enable Time, OE to Y
3.0 to 3.6
CL = 15 pF
CL = 50 pF
5.4
7.9
8.0
11.5
1.0
9.5
13.0
11.5
15.0
ns
4.5 to 5.5
CL = 15 pF
CL = 50 pF
3.6
5.1
7.1
1.0
6.0
8.0
7.5
9.5
tPLZ,
tPHZ
Output Disable Time, OE to Y
3.0 to 3.6
CL = 15 pF
CL = 50 pF
6.5
8.0
9.7
13.2
1.0
11.5
15.0
14.5
18.5
ns
4.5 to 5.5
CL = 15 pF
CL = 50 pF
4.8
7.0
6.8
8.8
1.0
8.0
10.0
12.0
CIN
Input Capacitance
4
10
10.0
pF
COUT
3State Output Capacitance
(Output in High Impedance
State)
6
pF
CPD
Power Dissipation
Capacitance (Note 3)
5.0
14
pF
3. CPD is defined as the value of the internal equivalent capacitance which is calculated from the dynamic operating current consumption without
load. Average operating current can be obtained by the equation ICC(OPR) = CPD VCC fin + ICC. CPD is used to determine the noload
dynamic power consumption: PD = CPD VCC2 fin + ICC VCC.
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