參數(shù)資料
型號(hào): nlast4501
廠商: ON SEMICONDUCTOR
英文描述: Single SPDT Analog Switch(單刀雙擲模擬開關(guān))
中文描述: 單SPDT模擬開關(guān)(單刀雙擲模擬開關(guān))
文件頁數(shù): 2/12頁
文件大小: 110K
代理商: NLAST4501
NLAST4501
http://onsemi.com
2
MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CC
Positive DC Supply Voltage
0.5 to
7.0
V
V
IN
Digital Input Voltage (Enable)
0.5 to
7.0
V
V
IS
Analog Output Voltage (V
NO
or V
COM
)
0.5 to V
CC
0.5
V
I
IK
DC Current, Into or Out of Any Pin
20
mA
T
STG
Storage Temperature Range
65 to
150
C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
260
C
T
J
Junction Temperature under Bias
150
C
JA
Thermal Resistance
SC70–5/SC–88A (Note 1)
TSOP–5
350
230
C/W
P
D
Power Dissipation in Still Air at 85 C
SC70–5/SC–88A
TSOP–5
150
200
mW
MSL
Moisture Sensitivity
Level 1
F
R
Flammability Rating
Oxygen Index: 30% – 35%
UL–94–VO (0.125 in)
V
ESD
ESD Withstand Voltage
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
> 2000
> 100
N/A
V
I
Latch–Up
Maximum Ratings are those values beyond which damage to the device may occur. Exposure to these conditions or conditions beyond those
indicated may adversely affect device reliability. Functional operation under absolute–maximum–rated conditions is not implied. Functional
operation should be restricted to the Recommended Operating Conditions.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm–by–1 inch, 2–ounce copper trace with no air flow.
2. Tested to EIA/JESD22–A114–A.
3. Tested to EIA/JESD22–A115–A.
4. Tested to JESD22–C101–A.
5. Tested to EIA/JESD78.
Latch–Up Performance
Above V
CC
and Below GND at 85 C (Note 5)
300
mA
RECOMMENDED OPERATING CONDITIONS
Symbol
Parameter
Min
Max
Unit
V
CC
Positive DC Supply Voltage
2.0
5.5
V
V
IN
Digital Input Voltage (Enable)
GND
5.5
V
V
IO
Static or Dynamic Voltage Across an Off Switch
GND
V
CC
V
V
IS
Analog Input Voltage (NO, COM)
GND
V
CC
V
T
A
Operating Temperature Range, All Package Types
55
125
C
t
r
, t
f
Input Rise or Fall Time,
(Enable Input)
V
cc
= 3.3 V
V
cc
= 5.0 V
0.3 V
0.5 V
0
0
100
20
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS
TIME TO 0.1% BOND FAILURES
Junction
Temperature
°
C
Time, Hours
Time, Years
80
1,032,200
117.8
90
419,300
47.9
100
178,700
20.4
110
79,600
9.4
120
37,000
4.2
130
17,800
2.0
140
8,900
1.0
1
1
10
100
1000
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
Figure 2. Failure Rate vs. Time Junction Temperature
N
TIME, YEARS
T
J
T
J
T
J
T
J
T
J
T
J
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