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參數(shù)資料
| 型號(hào)： | NLAS325US |
| 廠商： | ON Semiconductor |
| 文件頁數(shù)： | 5/10頁 |
| 文件大小： | 0K |
| 描述： | IC SWITCH DUAL SPST US8 |
| 產(chǎn)品變化通告： | LTB Notification 03/Jan/2008 |
| 標(biāo)準(zhǔn)包裝： | 1 |
| 功能： | 開關(guān) |
| 電路： | 2 x SPST - NC/NO |
| 導(dǎo)通狀態(tài)電阻： | 30 歐姆 |
| 電壓電源： | 單電源 |
| 電壓 - 電源，單路/雙路(±)： | 2.2 V ~ 5.5 V |
| 電流 - 電源： | 1µA |
| 工作溫度： | -55°C ~ 125°C |
| 安裝類型： | 表面貼裝 |
| 封裝/外殼： | 8-VFSOP（0.091"，2.30mm 寬） |
| 供應(yīng)商設(shè)備封裝： | US8 |
| 包裝： | 剪切帶 (CT) |
| 其它名稱： | NLAS325USOSCT |
NLAS325
http://onsemi.com
4
AC ELECTRICAL CHARACTERISTICS (Input tr = tf = 3.0 ns)
Guaranteed Maximum Limit
VCC
VIS
*555C to 255C
t855C
t1255C
Symbol
Parameter
Test Conditions
(V)
Min
Typ*
Max
Min
Max
Min
Max
Unit
tON
TurnOn Time
RL = 300 W, CL = 35 pF
2.5
3.0
4.5
5.5
2.0
3.0
5.0
2.0
23
16
11
9.0
35
24
16
14
5.0
2.0
38
27
19
17
5.0
2.0
41
30
22
20
ns
tOFF
TurnOff Time
RL = 300 W, CL = 35 pF
2.5
3.0
4.5
5.5
2.0
3.0
1.0
7.0
5.0
4.0
3.0
12
10
6.0
5.0
1.0
15
13
9.0
8.0
1.0
18
16
12
11
ns
tBBM
Minimum BreakBeforeMake
Time
RL = 300 W, CL = 35 pF
2.5
3.0
4.5
5.5
2.0
3.0
1.0
12
11
6.0
5.0
1.0
ns
*Typical Characteristics are at 25
°C.
Typical @ 25, VCC = 5.0 V
CIN
CNO or CNC
CCOM
C(ON)
Maximum Input Capacitance, Select Input
Analog I/O (switch off)
Common I/O (switch off)
Feedthrough (switch on)
8.0
10
20
pF
ADDITIONAL APPLICATION CHARACTERISTICS (Voltages Referenced to GND Unless Noted)
VCC
Typical
Symbol
Parameter
Condition
(V)
25
°C
Unit
BW
Maximum OnChannel 3.0 dB
Bandwidth or Minimum Frequency
Response (Figure 10)
VIN = 0 dBm
VIN centered between VCC and GND
(Figure 6)
3.0
4.5
5.5
145
170
175
MHz
VONL
Maximum Feedthrough On Loss
VIN = 0 dBm @ 100 kHz to 50 MHz
VIN centered between VCC and GND
(Figure 6)
3.0
4.5
5.5
*2.0
dB
VISO
OffChannel Isolation (Figure 9)
f = 100 kHz; VIS = 1.0 V RMS
VIN centered between VCC and GND
(Figure 6)
3.0
4.5
5.5
*93
dB
Q
Charge Injection Select Input to
Common I/O (Figure 14)
VIN = VCC to GND, FIS = 20 kHz
tr = tf = 3.0 ns
RIS = 0 W, CL = 1000 pF
Q = CL * DVOUT
(Figure 7)
3.0
5.5
1.5
3.0
pC
THD
Total Harmonic Distortion THD +
Noise (Figure 13)
FIS = 20 Hz to 100 kHz, RL = Rgen = 600 W, CL = 50 pF
VIS = 5.0 VPP sine wave
5.5
0.1
%
VCT
ChanneltoChannel Crosstalk
f = 100 kHz; VIS = 1.0 V RMS
VIN centered between VCC and GND
(Figure 6)
5.5
3.0
*90
dB
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