![](http://datasheet.mmic.net.cn/ON-Semiconductor/NLAS3158MNR2G_datasheet_99144/NLAS3158MNR2G_3.png)
NLAS3158
http://onsemi.com
3
DC ELECTRICAL CHARACTERISTICS (TA = 40°C to +85°C)
Symbol
Parameter
Test Conditions
VCC
(V)
TA = +255C
TA = 405C to +855C
Unit
Min
Typ
Max
Min
Max
VIH
HIGH Level
Input Voltage
1.651.95
2.35.5
0.75 VCC
0.7 VCC
V
VIL
LOW Level
Input Voltage
1.651.95
2.35.5
0.25 VCC
0.3 VCC
V
IIN
Input Leakage Current
0
v VIN v 5.5 V
05.5
"0.0
5
"0.1
"1
mA
IOFF
OFF State Leakage
Current
0
v A, B v VCC
1.655.5
"0.0
5
"0.1
"1
mA
RON
Switch On Resistance
VIN = 0 V, IO = 30 mA
VIN = 2.4 V, IO = 30 mA
VIN = 4.5 V, IO = 30 mA
4.5
3.0
5.0
7.0
6.0
8.0
13
6.0
8.0
13
W
VIN = 0 V, IO = 24 mA
VIN = 3 V, IO = 24 mA
3.0
4.0
10
8.0
19
8.0
19
W
VIN = 0 V, IO = 8 mA
VIN = 2.3 V, IO = 8 mA
2.3
5.0
13
9.0
24
9.0
24
W
VIN = 0 V, IO = 4 mA
VIN = 1.65 V, IO = 4 mA
1.65
6.5
17
12
39
12
39
W
ICC
Quiescent Supply
Current
All Channels ON or
OFF
VIN = VCC or GND
IOUT = 0
5.5
1.0
10
mA
Analog Signal Range
VCC
0
VCC
0
VCC
V
RRANGE
On Resistance
Over Signal Range
IA = 30 mA, 0 v VBn v VCC
IA = 24 mA, 0 v VBn v VCC
IA = 8 mA, 0 v VBn v VCC
IA = 4 mA, 0 v VBn v VCC
4.5
3.0
2.3
1.65
25
50
100
300
W
DRON
On Resistance Match
Between Channels
IA = 30 mA, VBn = 3.15
IA = 24 mA, VBn = 2.1
IA = 8 mA, VBn = 1.6
IA = 4 mA, VBn = 1.15
4.5
3.0
2.3
1.65
0.15
0.2
0.5
W
Rflat
On Resistance
IA = 30 mA, 0 v VBn v VCC
IA = 24 mA, 0 v VBn v VCC
IA = 8 mA, 0 v VBn v VCC
IA = 4 mA, 0 v VBn v VCC
5.0
3.3
2.5
1.8
5.0
10
24
110
W
3. Measured by the voltage drop between A and B pins at the indicated current through the switch. On Resistance is determined by the lower
of the voltages on the two (A or B Ports).
4. Parameter is characterized but not tested in production.
5.
DRON = RON max RON min measured at identical VCC, temperature and voltage levels.
6. Flatness is defined as the difference between the maximum and minimum value of On Resistance over the specified range of conditions.
7. Guaranteed by Design.