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參數(shù)資料
| 型號(hào)： | NJ36D |
| 廠商： | InterFET Corporation |
| 英文描述： | Silicon Junction Field-Effect Transistor |
| 中文描述： | 硅結(jié)場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/2頁 |
| 文件大?。?/td> | 130K |
| 代理商： | NJ36D |
At 25°C free air temperature:
NJ36D Process
Static Electrical Characteristics
Min
Typ
Max
Unit
Test Conditions
Gate Source Breakdown Voltage
Reverse Gate Leakage Current
Drain Saturation Current (Pulsed)
Gate Source Cutoff Voltage
V
(BR)GSS
I
GSS
I
DSS
V
GS(OFF)
– 25
– 35
0.05
V
nA
mA
V
I
G
= – 1 mA, V
DS
= V
V
GS
= – 15V, V
DS
= V
V
DS
= 15V, V
GS
= V
V
DS
= 15V, I
D
= 1 nA
0.1
40
– 8
1
– 0.5
Dynamic Electrical Characteristics
Drain Source ON Resistance
Forward Transconductance
Input Capacitance
Feedback Capacitance
Equivalent Noise Voltage
Differential Gate Source Voltage
r
ds(on)
g
fs
C
iss
C
rss
ˉ
N
V
GS1
– V
GS2
90
250
mS
pF
pF
I
D
= mA, V
GS
= V
V
DS
= 15V, V
GS
= V
V
DS
= 10V, V
GS
= V
V
DS
= 10V, V
GS
= V
nV/
√
HZ V
DS
= 15V, I
D
= 5 mA
mV
V
DG
= 15V, I
D
= 5 mA
f = 1 kHz
f = 1 kHz
f = 1 MHz
f = 1 MHz
f = 1 kHz
8.5
5.5
1.5
5
20
7.0
3
5
100
1000 N. Shiloh Road, Garland, TX 75042
(972) 487-1287
FAX
(972) 276-3375
www.interfet.com
Die Size = 0.026" X 0.026"
All Bond Pads = 0.004" Sq.
Substrate is also Gate.
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PDF描述 |
|---|---|
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| NJ8820BADP | FREQUENCY SYNTHESISER (PROM INTERFACE) |
| NJ8820BAMP | FREQUENCY SYNTHESISER (PROM INTERFACE) |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NJ37C11192 | 制造商:WINCHESTER 制造商全稱:Winchester Electronics Corporation 功能描述:EDGECARD, CONTINUOUS CARD COLLECTOR |
| NJ37C11195 | 制造商:WINCHESTER 制造商全稱:Winchester Electronics Corporation 功能描述:EDGECARD, CONTINUOUS CARD COLLECTOR |
| NJ37C11792 | 制造商:WINCHESTER 制造商全稱:Winchester Electronics Corporation 功能描述:EDGECARD, CONTINUOUS CARD COLLECTOR |
| NJ37C12192 | 制造商:WINCHESTER 制造商全稱:Winchester Electronics Corporation 功能描述:EDGECARD, CONTINUOUS CARD COLLECTOR |
| NJ37C12195 | 制造商:WINCHESTER 制造商全稱:Winchester Electronics Corporation 功能描述:EDGECARD, CONTINUOUS CARD COLLECTOR |
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